2N3823 EQUIVALENT Search Results

2N3823 equivalent

Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

2N3822

Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

Contextual Info: B4 9-97 2N3823, 2N3824 N-CHAN NEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR VHF AMPLIFIERS SMALL SIGNAL AMPLIFIERS Absolute maximum ratings at TA = 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2N3824

Abstract: 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E ­ QUENCY UP TO 450MHz. • THE DEVICE IS ALSO

2N3823 equivalent

Abstract: 2N3823
Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR , ï 1 e I nwfi t f CASE TO-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT FRE­ QUENCY UP TO 450MHz. •THE DEVICE IS ALSO

MPF111 equivalent

Abstract: 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58 MPF109
Contextual Info: 2N3823 n-channel JFET designed for a Siliconix . Performance Curves NRL See Section 5 VHF Am plifiers Oscillators M ixers BEN EFITS • Low Noise N F < 2.5 dB @ 100 MHz TO -72 See Section 7 »ABSO LUTE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) . -3 0 V

2N3822 equivalent

Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

2N3823

Abstract: 2N3821UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

2N3823 equivalent

Abstract: 2N3822 equivalent 2n3821 2N3823 Model 2N3822UB 2N3822 2N3823
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2004. INCH-POUND MIL-PRF-19500/375G 21 June 2004 SUPERSEDING MIL-PRF-19500/375F 19 March 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE,

2n3824

Abstract: 2N3822 equivalent 2N3823 equivalent 2N3824 equivalent
Contextual Info: TYPES 2N3821 THRU 2N3824 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 9 , M A R C H 1973 2N3821, 2N3822 FO R S M A L L-S IG N A L A P P LIC A T IO N S • Low lG S S : < 10 0 pA • Low Cj$s : < 6 pF • High

AN478A

Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network

MJ2955 equivalent

Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
Contextual Info: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-

2N3823 equivalent

Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

TIS88A equivalent

Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Contextual Info: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible