TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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2n50452n50462n5047tis69 equivalent+62n3575germanium itttis59tis582n2386tis26
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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automat218amsc1621t1msc2404msd1819a+15mv1620mv1624mv1636mv1640mv1642mv1644mmbf4856transistor equivalent 2n5551bf245 application notemsc162174ls04 fan out2n3819 equivalent transistormmbf5486lbf245 equivalentmps8093
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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BF245 application note
Abstract: transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies
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mbd110dwt1mbd330dwt1mbd770dwt1so218a+16msc1621t1msc2404msd1819amv1620mv1624mv1636bf245 application notetransistor bf2452n4036 equivalentbc237h.p. part numbers to jedec numbers 2n40362n3819 application notebf245 transistorsot-363 x3sot 363 marking code m46 21 x2 marking code sot 363
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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BC237
Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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mv104226aacurren218amsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv104 "direct replacement2n3819 application notebf245 application notek 2056 transistormv104 equivalentbc237bss89 application
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TRANSISTOR MARKING Y1 SOT23 5L
Abstract: BF245 application note BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package
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mmbv609lt1capacitan218amsc1621t1msc2404+11msd1819amv1620mv1624mv1636mv1640mv1642transistor marking y1 sot23 5lbf245 application notebc237dual general purpose transistors marking code d3k 2056 transistor
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transistor equivalent 2n5551
Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.
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1n5446arl1n5448arl1n5456amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640transistor equivalent 2n5551bf245 equivalentequivalent transistor bc109ctransistor equivalent ct 2n5551bc237bc238 equivalenttr bc547bf422 equivalentmotorola fets 3000 series part numbersmps2369 equivalent
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BC237
Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage
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2N5640 equivalent
Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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2n5640226aagate218amsc1621t1+13msc2404msd1819amv1620mv1624mv1636mv16402n5640 equivalentbc547 collector characteristic curvebf245 application notemotorola jfet 2n3819bc2372n29042n6431
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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