2n222a
Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762
Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX fT (pF) (MHz) NF Typ † (dB)
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o-116mpq22222n2222mpq2222a+132n222ampq23692n2907mpq67002n39042n222a datasheet2n222a npn2n37622n2907 equivalent2x pnpmpq70532n2222 pnpmpq3762
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PNP 2N3904
Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
Contextual Info: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS
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o-116mpq22222n2222mpq2369+92n2369mpq24832n2483mpq2484mpq6502pnp 2n39042n2222 pin2n2222 pnp2n3906
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PIN CONFIGURATION 2N2222
Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS
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o-1162n2222mpq2222mpq2369+92n2369mpq24832n2483mpq2484mpq6502pin configuration 2n22222n2222 pinpnp 2n39042n2222 pnp
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2N2222 pnp
Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)
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o-116mpq22222n2222mpq2369+152n2369mpq24832n2483mpq24842n2484mpq29072n2222 pnp2x pnp transistorspnp 2n3904pin configuration 2n22222n3904 225mp039062n39062n3906d2n2222 dip
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PIN CONFIGURATION 2N2222
Abstract: 2N2907 NPN Transistor 2N2222 PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053
Contextual Info: Quad Transistors* '^ 0 0 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0W atts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BV c b Q b v c e o b v e b o iCBO * ? v CBO (V) (V) 00 (nA) MIN MIN MIN MAX NFe @*c <rr»A> (V) MIN VCE(SA r) 00 @*c <mA) MAX c ob *T NF
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o-116mpq22222n2222mpq2369+152n2369mpq24832n2483mpq24842n2484mpq2907pin configuration 2n22222n2907 npn transistorpnp 2n39042n2222 pnp2n3906mpq37622n3799 dip2x pnp transistorsmpq7053
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2N3906
Abstract: 2N2222 hfe 2N3904 NPN dip
Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS
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o-116mpq2222mpq2222ampq2369+9mpq2483mpq2484mpq2907mpq2907ampq3467mpq37252n39062n2222 hfe2n3904 npn dip
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TZ554
Abstract: 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-82 TZ-81 sprague catalog transistor 2N4258 2N2907 PNP Transistor to 92
Contextual Info: if: iS% V? /p If f BIPOLAR TRANSISTORS • BIPOLARTRANSISTORS S P R A G U E THE M A R K O F RE LIA B ILIT Y SERIES TPP M EDIUM PO W ER DARLINGTON A R R A YS • S pr ague Series T P P devices are m e d i u m- p o we r Darlington arrays, These devices provide c o mpl ement s to Series T P Q quad transistor
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tpp1000tpp2000tz554tz581+10tz5822n2907 pnp bipolar transistortz5522n4258tz554 transistortz-82tz-81sprague catalogtransistor 2n42582n2907 pnp transistor to 92
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2n3817
Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier
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75t73fc2604/ja2605/ja54bsc+13o-11614-lead100bsc2n38172n38042n38002n38022n38122n3816raytheon emitter pad2n3812n4942raytheon npn
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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mmbd1000lt1mmbd2000t1mmbd3000t1mmsd1000t1+7ot-23o-236abv218amsc1621t1msc2404bc237mpsa06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf1p02elt1l218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv16422n16bc237bcy72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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BC237
Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3441xt1t218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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mps3640226aau218amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640mps5771mps8093bf3912n3819 replacementmps3640 equivalentmpf3821mps6595mad130pbc108 characteristic2n3819 equivalent ic
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BC237
Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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baw156lt1baw156lt3inch/10236ab+7junc218amsc1621t1msc2404msd1819amv1620bc237transistor bc177b
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MPS6520 equivalent
Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage
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mpsw01mpsw01a226aejunc218a+6msc1621t1msc2404mps6520 equivalentbc237transistor vbe 2n2222characteristic curve bc107
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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mpsh17226aamsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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mgsf1n03lt1sur218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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MPS2369 equivalent
Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage
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mps2369mps2369a226aamsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv1640mps2369 equivalentbc2372n5551 circuit2n2369a motorolat1 bc140bs107 "direct replacement
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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ot-223pzt2907at1pzt2222at1inch/1000+12pzt2222at3inch/4000unit218amsc1621t1motorola p1fhie for bc547bbc237transistor motorola 2n3053marking p1f619 sc-59p1f markingmarking code zi sot363
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2N5640 equivalent
Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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2n5640226aagate218amsc1621t1+13msc2404msd1819amv1620mv1624mv1636mv16402n5640 equivalentbc547 collector characteristic curvebf245 application notemotorola jfet 2n3819bc2372n29042n6431
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