2N3553 NPN Search Results

2N3553

Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
Contextual Info: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver

Contextual Info: m 2N3553 \ \ NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE T O -39 8 .8 9 0 - 9 .398 0.315- 0.335 (8.001- 8 .509) T MAXIMUM RATINGS 1.0 A lc V

multi-emitter transistor

Abstract: 2NS553 2n3553
Contextual Info: <Se.mi- Conductor ^Products., Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 TYPE 2N3553 VHP Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal,

2N3553

Abstract: 2N3553 NPN 2N3553 equivalent transistor 2n3553
Contextual Info: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 1.0 A VCE 40 V PDISS 7.0 W @ TC = 25 C O O O O O TJ -65 C to +200 C

2N3553

Contextual Info: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

2N3553

Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
Contextual Info: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes

2N3553

Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
Contextual Info: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes

2N3553

Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial

2N3553 JANTX

Contextual Info: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

2N3553 JANTX

Abstract: 2N3553 JANTXV 2N3553 JAN
Contextual Info: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

2N3553

Abstract: 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
Contextual Info: 2N3553 MECHANICAL DATA Dimensions in mm inches NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Contextual Info: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim

2N3553

Abstract: 2N3553 motorola U028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3553 2.5 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed for amplifier and oscillator applications in m ilitary and industrial equipment. Suitable for use as output, driver or pre­

2N3553

Abstract: DATA TRANSISTOR
Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 65.0 V NO. 2N3553 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 4.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)

Contextual Info: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3553+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30

BY1-1F

Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
Contextual Info: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Contextual Info: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in

2N3553 motorola

Abstract: 2n3961 2n3632 2N3553 2N3375 MOTOROLA 2n3553
Contextual Info: MOTOROLA i SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DE J t . 3 t . 7 E 5 5 DIODES/OPTO 34C 3 80 50 7" SILICON RF TRANSISTOR DICE (continued) ' - "3 I I DOaf iDSD - D 23 2C3553 DIE NO. — NPN LINE SOURCE — RF502.140 This die provides performance equal to or better than that of

Contextual Info: DARLINGTON AMPLIFIERS Electrical Characteristics @ 25°C M aximum Ratings Type NPN pD A m bient mW V CB V CE Volts Volts VQ ^ISat @ l ^ / l g M in/M ax mA Volts m A /m A ft MHz Min 7000/70,000 100 1.6 100/10 60* 30 TO-18 10 1.8 100/10 60* 30 TO-72 TO-72 H F E @ *C

BY1-1F

Abstract: A15-12 A1512 S175-50 BAM40 BY1-1 BY17 S100-12 S100-28 S15-28
Contextual Info: BH AR AT ELEK/SEP1IC0ND DI 47E D • 1 4 3 5 3 ^ 0 OO DD Ol ? 375 ■ BELI T " 3 3 - Ô / RF DEVICES H.F. 2 -3 0 MHz Type Polarity S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* * S30-12*y S50-12* S100-12* S1 75-28* * S1 75-50 A’ * NPN NPN NPN NPN NPN NPN