2N3019 DIE Search Results

pnp for 2n3019

Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
Contextual Info: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general

2N3019

Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2n3019

Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2N3019 DIE

Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2N3700 DIE

Abstract: PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET

2N3700 DIE

Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

2N3019

Abstract: 2n3019 equivalent CMPT3019 CP305 CXT3019 CZT3019
Contextual Info: PROCESS CP305 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS

2N3019 DIE

Abstract: 2N3019 CMPT3019 CP305 CXT3019 CZT3019
Contextual Info: PROCESS CP305 Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization

2N2195

Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Contextual Info: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:

Contextual Info: D a ta S h e e t No. 2 C 3 0 1 9 SEMICONDUCTORS G e n e ric P a c k a g e d P a rts : Chip Type 2C3019 Geometry 4500 Polarity PNP 2 N 3 0 1 9, 2 N 3 0 5 7 Chip type 2C3019 by Semicoa Semi­ conductors provides performance similar to these devices. Product Summary:

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

662 marking

Abstract: 2N3019 LDT3019 LDT3019T 2N3019 DIE 015X transistor 2n3019 transistor
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDT3019 and LDT3019T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

Contextual Info: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

MCA0616/1

Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

ADM9240

Abstract: TRANSISTOR C3295 C3295 MRD901 RPM-880 2408NL 2410ML 2N2219A 2N3019 ADM9240ARU
Contextual Info: a Low Cost Microprocessor System Hardware Monitor ADM9240 FEATURES Six Direct Voltage Measurement Inputs Including Two Processor Core Voltages with On-Chip Attenuators On-Chip Temperature Sensor Five Digital Inputs for VID Bits Fully Supports Intel’s LANDesk Client Manager (LDCM)

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.