2N30 Search Results

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3055A

Abstract: Vce(sat) MJ2955A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A

2N3012

Abstract: 2N2894 2N3012M
Contextual Info: TYPES ¿«1884 2N3012 P-N-P SILICON TRANSISTORS B U L L E T IN NO. O L S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Guaranteed VCE|>ot| 0 .5 v Max at 100ma • High f , - 400 Me Min "m echanical d ata T H E COLLECTOR IS IN E L E C T R IC A L

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.

2N3020

Abstract: 2N3019
Contextual Info: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: DIGITRON SEMICONDUCTORS 2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC

2N3019

Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2N3055HV

Abstract: transistor 2N3055hv
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

Contextual Info: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC

2n3055

Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
Contextual Info: 2N3055/7 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3057A

Contextual Info: Data Sheet No. 2N3057A Generic Part Number: 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case.

2N3012CSM

Abstract: 400M
Contextual Info: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N3171

Abstract: 2N3022 2N3195 2N3202 2N3183 2N3025 2N3026 2N3172 2N3719 2N3021
Contextual Info: industrial power transistors 128 SILICON PNP TRANSISTORS 5 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

TEXAS 2N3055

Abstract: 2N3055 transistor 2N3055 2N3055 silicon
Contextual Info: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

ZENER 2V7

Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
Contextual Info: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053