2N2857 JAN Search Results

2N2857

Abstract: 2N2857 semicoa 2N2857 JAN transistor TO-72 2n2857 data sheet
Contextual Info: Data Sheet No. 2N2857 Generic Part Number: 2N2857 Type 2N2857 Geometry 0011 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/343 Features: • Low power, ultra-high frequency transistor. • Housed in TO-72 case. • Also available in chip form using

Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2N2857

Abstract: 2N2857 JANTXV
Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2N2857 JANTX

Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2n2857

Contextual Info: 2N2857 VHF/UHF AMPLIFIERS DESCRIPTION The 2N2857 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case, intended for amplifier, oscillator and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

2N2857 semicoa

Contextual Info: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J

2N2857 semicoa

Abstract: 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX
Contextual Info: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J

Contextual Info: 2N2857 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2857J • JANTX level (2N2857JX)

2N2857

Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels

2N2857 semicoa

Abstract: 2N2857UB 2N2857 2N2857 JANS
Contextual Info: Data Sheet No. 2N2857UB Generic Part Number: 2N2857 Type 2N2857UB Geometry 0011 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/343 Features: • Low power, ultra-high frequency transistor. • Housed in a cersot case. • Also available in chip form using

TRANSISTOR 117a

Contextual Info: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels

Contextual Info: 2N2857+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15

Contextual Info: 2N2857+JAN Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15

S-parameter 2N5179

Abstract: s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter
Contextual Info: Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description Nominal fT - 1.8 G H z Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency - 10 M H z to 600 M Hz Geometry - 20 This series of N PN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain

SGS-Thomson

Abstract: 2N2857
Contextual Info: SGS-THOMSON » S K y i O M W i 2 N 2 8 5 7 VHF/UHF AMPLIFIERS DESCRI PTI ON The 2N2857 is a silicon planar epitaxial NPN tran­ sistors in JedecTO -72 metal case, intended for am­ plifier, oscillator and converter applications up to 500 MHz. A BS O L UT E MAXI MUM RA TI NGS

2N2857 Model

Abstract: 2N3570
Contextual Info: n i> — • sb4E5m D D o m s a i mmc — Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description n / A ~ c o r i s e m i c o n D t BRl n g t o n r - ’J i- « ' Nominal fT - 1.8 GHz Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency > 1 0 MHz to 600 MHz

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

2N2857UB

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

MRF542

Abstract: MRF545 BFR90 transistor mrf544 high gain PNP RF TRANSISTOR transistor bfr96 2n4427 motorola 2N4427 MRF511 MRF543
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2n5835

Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­