2N2605 Search Results

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

2n26

Contextual Info: 2N2605 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Noise-level amplifier circuits • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2605J • JANTX level (2N2605JX)

2N3347

Abstract: 2N3350 2n3349 2N33 2N3352 2n3348 NS2N
Contextual Info: TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 8 8 1 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors Recommended for Low-Noise, High-Gain Differential Amplifiers

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

Contextual Info: 2N2605CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N2945

Abstract: 2N2946A jan 2n5582 2N2604 2N2605 2N2946 2N3485 2N3486 TO46 new england semiconductor transistors
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I 1H VcEO DEVICE sus TYPE VOLTS 2N2604 45 2N2605 45 2N2944AA 10 2N2945 20 2N2945AA 20 2N2946 35 2N2946AA 35 2N3485 40 2N3485AA 60 2N3486 40 2N3486AA 60 2N3764A 40 2N3765A 60

2N2605

Abstract: 2N2605UB 2N2604 TO206AB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB 2N2605 2N2605UB

2N2605

Abstract: 2N2604 ADC-03
Contextual Info: TECHNICAL DATA 2N2604 JAN, JTX, JTXV 2N2605 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/354 LOW-POWER PNP SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N2094

Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Contextual Info: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821

2N2711

Contextual Info: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B

2N26

Abstract: 2n2605
Contextual Info: 2N2605 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Noise-level amplifier circuits • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2605J • JANTX level (2N2605JX)

2N2605CSM

Contextual Info: 2N2605CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

2N4288

Abstract: 2N4062 2n4289 2N4248 2N4249 2N4250
Contextual Info: «MMJ This PNP Transistors Material /> £ 3 S e m ic a r K J u c lo r Lo w m L e v e l A m P |i,ie r s 2 t-H Copyrighted Type No. Case Style 2N2605 TO-46 By 2N35S0 to -ib VCE(SAT VBE(SAT) VcbO VCEO Ve BO 'CB0 VCB l»FE - lc . VCE (V) (nA)@ “ (V) (V) Min Max (mA) (V)

2N2605JV

Abstract: 2N2605JX 2N2605 2N2605J
Contextual Info: 2N2605 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Noise-level amplifier circuits • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2605J • JANTX level (2N2605JX)

Contextual Info: 2N2605 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Noise-level amplifier circuits • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2605J • JANTX level (2N2605JX)

LA 4138

Abstract: 2n2605
Contextual Info: TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 6 , M A R C H 1973 FOR LO W -LEVEL, LOW -NOISE, H IG H -G A IN A M P L IF IE R A PPLICATIO N S • For Complementary Use with 2N 929, 2N 930, 2N 2483, 2N 2484, and 2N 2586

2N2605

Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Contextual Info: PROCESS CP588 Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

BC108 transistor

Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.