BC140 equivalent
Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18
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bc1072n2484bc107a2n930+13bc107bbc108bc108abc140 equivalent2n3019 equivalentbc107 equivalent transistorsbcy59 equivalentequivalent to bc177bc141 equivalent2n930 equivalentbc107 pnp equivalentbc109 equivalentbc160 equivalent
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BC140 equivalent
Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB
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2n327a2n327b2n328a2n328b+162n329a2n329b2n7602n760a502n329abcy56bc140 equivalent2n2484 equivalent transistorsbc141 equivalentbcy59 equivalentbc160 equivalent2n930 equivalentbc107 equivalent transistors2n3019 equivalentbc177 equivalentbc107 pnp equivalent
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bcy59 equivalent
Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943
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2n943t0-182n20042n2333+162n29442n29452n2945a2n29462n2946a52n329abcy59 equivalentbc140 equivalent2n3913bcy95bc140-102n3019 equivalent2n27082n328abc109c npnbcy22
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EQUIVALENT TRANSISTOR bc109c
Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB
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2n327a2n327b2n328a2n328b+162n329a2n329b2n7602n760abt29462n2946equivalent transistor bc109cequivalent transistor 2n1711transistor bc107 motorolabc109 transistor equivalent listequivalent transistor bc108transistor bc107b motorolatransistor pnp bc140transistor bc140bc140 equivalenttransistor bc107b equivalent
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bc109 Transistor Equivalent list
Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+11bs9302bfs36a2n929baw63abc109 transistor equivalent listnpn transistor w62n2484 equivalent transistorstransistor equivalent table bc109transistor bc109ztx341f021
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2N2484UB
Abstract: 500ADC 2n2484 equivalent 2N2484UA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON LOW POWER TRANSISTOR
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mil-prf-19500/3762n24842n2484ua2n2484ub+42n2484ubct4-lds-0058500adc2n2484 equivalent
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diode D07-15
Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification
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1n2511n2521n4611n625+151n62g1n8141n9031n903a1n9041n914diode d07-15diode d071n3605diode 1n40871n91482n2222 chip1n4532d07 15diode 1n3605
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BC140 equivalent
Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abc140 equivalent2n4427 equivalent2n4036 equivalent2n2270 equivalent2n3866 equivalent
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BC140 equivalent
Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF
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2n721a2n722a2n1132a2n1132b+152n22172n22182n2218a500/5npnbsy51bc140 equivalentbcy342n328abcy31bcy59 equivalentbc109 motorolabcy25dh3725cnbc108c equivalent2n3133 motorola
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PNP Transistor 2N2222 equivalent
Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510
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1n9141n914a1n914bm46p-x510+161n3064m46p-x5071n36001n3605m46p-x5161n4150pnp transistor 2n2222 equivalentdiode 1n36052n2907 equivalentequivalent transistor 2n22222n2222 npn transistor general purpose1n3605 equivalent2n2222 npn small signal current gain2n2222 chipdiode 1n9148transistor npn high speed switching
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BFY50 equivalent
Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments
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cv7722bfy50cv7723bfy51+14cv7724bfy52cv7725cv7726bfy50 equivalent2n2222 texas instrumentscv7756bfy51 equivalentcv7735bfy52 equivalentequivalent of 2n22222n2222 npn small signal current gain2n2222 equivalent 2n24842n2222 ti
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1N4937 SMD
Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series
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cll914cmpd28cmpd28icmpd7000+16bas28cmpd4448cll4448cmpd41cll4150bas561n4937 smddiode 1n4007 melf smd2n5401 smd1n4001 melfdiode 1n4007 melf2n2222a sot2231n4148 sod-802n2222a sot231n5819 sod802n2369 sot-23
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2N2484
Abstract: 2N2484UA 2N2484UB 2N2484 EQUIVALENts JANSR 2N2484 2N2484UBC 2N2484 JANTX
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 12 December 2007. INCH-POUND MIL-PRF-19500/376H 12 September 2007 SUPERSEDING MIL-PRF-19500/376G 15 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
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mil-prf-19500/376hmil-prf-19500/376g2n24842n2484ua+52n2484ub2n2484ubc2n2484 equivalentsjansr 2n24842n2484 jantx
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BFY52 equivalent
Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device
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bfs362n930bs9365baw63+12bs9302bfs36a2n929baw63abfy52 equivalentic marking z7marking c1s2n22222n24752n2938f0252n2369 equivalent
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EQUIVALENT TRANSISTOR bc108
Abstract: bc109 equivalent BC107 equivalent transistors transistor t05 equivalent transistor of 2n2219a BC177 equivalent BC107 equivalent bc325 bc143 BC107
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads—38,1mm (1,5in) at a small extra
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bcw35gpbs93652n40362n4037+12bs33652n4030equivalent transistor bc108bc109 equivalentbc107 equivalent transistorstransistor t05equivalent transistor of 2n2219abc177 equivalentbc107 equivalentbc325bc143bc107
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transistor w4
Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63atransistor w4bss56f007 amplifierstransistors for uhf oscillators2n2475f021f025ic marking z7marking z6rf marking y2
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bcy79 equivalent
Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abcy79 equivalent2n3053 equivalentbcy78 equivalent2n2905a equivalentf025
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C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbs93002n2219a2n2221+132n22222n2221aft018c495 transistorc638 transistorequivalent transistor bc108c756 transistorpnp transistor 2n2222 equivalentc735 transistorc637 transistortransistor c495transistor bc107 current gainc372 transistor
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2N2484UA
Abstract: 2N2484UB 2N2484 MIL-PRF19500 2N2484 JANTX
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 November 2000. INCH-POUND MIL-PRF-19500/376E 31 August 2000 SUPERSEDING MIL-PRF-19500/376D 21 August 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
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mil-prf-19500/376emil-prf-19500/376d2n24842n2484ua+42n2484ubmil-prf-19500mil-prf195002n2484 jantx
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Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. INCH-POUND MIL-PRF-19500/376K 30 March 2013 SUPERSEDING MIL-PRF-19500/376J 20 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
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mil-prf-19500/376kmil-prf-19500/376j2n24842n2484ua+42n2484ub2n2484ubc2n2484ubn2n2484ubcn
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2n3019 equivalent
Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE
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2n28972n28982n28992n2900+162n30192n30202n30362n30532n329abcy562n3019 equivalent2n3053 equivalentbc140 equivalentbc141 equivalent2n930 equivalentbcy59 equivalentbc107 equivalent transistors2n328abc109c npnbcy31
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BC140 equivalent
Abstract: 2n4036 equivalent BAW66 Bc161 marking 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device
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bfs362n930bs9365baw63+8bs9302bfs36a2n929baw63abc140 equivalent2n4036 equivalentbaw66bc161 marking
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BZX88C
Abstract: BZX88 BZX88C20 2N3053 equivalent 2N929 2N930 bcy59 equivalent BAW63A BFS36 BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abzx88cbzx88bzx88c202n3053 equivalentbcy59 equivalent
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2N2475
Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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bfs362n930bs9365baw63+10bs9302bfs36a2n929baw63a2n24752n2907 equivalent2n2369 equivalentf025ic marking z72n2369 ferranti
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