2N2222 ITT Search Results

Contextual Info: P FORWARDINTERNATIONAL ELECTRONICS LTD. 2N2222 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Colector-Bnittef Voltage: VCBO=30V * Cofcctor Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic

s parameters of 2N2222

Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
Contextual Info: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c

2N2222A motorola

Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
Contextual Info: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc

2n4854

Abstract: 2N4855
Contextual Info: TYPES 2N4854, 2N4855 N-P-N, P-N-P DUAL SILICON TRANSISTORS B U L L E T IN NO D L-S 7 2 1 1 6 9 4 , M A R C H 1 97 2 DESIGNED FOR COMPLEMENTARY MEDIUM-POWER HIGH-SPEED SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • 2N4854 Electrically Similar to 2N2222/2N2907

tl 2n2222

Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
Contextual Info: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.

2N2217

Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Contextual Info: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA

2N2222A plastic package

Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
Contextual Info: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

2n2222 itt

Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
Contextual Info: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

2n2222 itt

Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51

2n2222 2n5401 2n5551

Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.

fairchild 2N2222A

Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Contextual Info: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

2n h 2222a

Abstract: 2N2218 2222a 2N5581 ip 2222A
Contextual Info: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE A N 1082 Sim ple Design for a 4 -2 0 mA Transm itter In te rfa c e Using a M otorola Pressure Sensor Prepared by: Jean Claude Hamelain Motorola Toulouse Application Lab Manager INTRODUCTION Pressure is a very important parameter in most industrial

Contextual Info: EL2021C étantec KiGMp c w g r m ä ü c e rat eocwcöTts EL2021C Monolithic Pin Driver F e a tu r e s G e n e r a l D e s c r ip tio n • Wide range o f programmable analog output levels T he E L 2021 is designed to drive programmed voltages into dif­ ficult loads. I t has the required circuitry to be used as the pin

2N2222A itt

Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
Contextual Info: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C

2n2222 itt

Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C

semicoa 2N2222A

Abstract: 2N2222 die CP2222A SD2222A 2c2222
Contextual Info: Data Sheet No. CP2222A 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255 20 MILS E B 20 MILS Chip type 2C2222AKV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

Contextual Info: p semrofl ¡J8BBBBB88& | M iwiHBBffi .rfHHHHHHHHMh. mssssP % » 1 1 I I ititn nnnn hhhhhhk-. ^88888 % # ><>niftBHhr 1 D a ta S h e e t No. C P 2 22 2 A $ id L SEMICONDUCTORS 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

saa 1094

Abstract: LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t
Contextual Info: fu ¡in fitti lattàia, Cutot lu i h a i bltqm u F lG l'R E 18. 4-20mA Current Loop Receiver with Input Overload Protection. PO L RE 19. 0-20mA/3-5V Receiver l/sing RCV420. 4 .: s Burr-Brown IC Data Book—Linear Products I Or, btt Culutr Sirria 2/ MM-Wfftt Utt Otifl

transistor e2w

Abstract: book TRANSISTOR 2N2222
Contextual Info: For Immediate Assistance, Contaci M Local Salesperson IRR-BWOWW« XTR101 AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30nV max Low Voltage Drift, 0.75|iV/°C max