2N 3904 Search Results

BC 540 TRANSISTOR

Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

3904

Abstract: NPN transistor 2n 3904 transistor 3904 2N 3904 transistor TRANSISTOR 2N 3904 tr 3904 2N3904 3904 TRANSISTOR PNP 1/2N 3904 3904 TRANSISTOR npn
Contextual Info: HN/2N 3903/3904 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors HN / 2N 3905 and HN / 2N 3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92

3906

Abstract: transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906
Contextual Info: HN/ 2N 3905/3906 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors HN / 2N3903 and HN / 2N 3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92

3904c

Abstract: 2N3904C datasheet 2N 2N3904 transistor 2n
Contextual Info: SEMICONDUCTOR 2N3904C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3904C K 3 No. Item 016 2 4 Marking Description 2N Series Name 3904C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year

2N3904

Abstract: 2n3904 transistor 2N3904 equivalent 3904 transistor 2N3904 2N3904 datasheet 2N3904 transistor equivalent transistor 3904 2n3904 specification equivalent transistor 2n3904
Contextual Info: SEMICONDUCTOR 2N3904 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3904 K 3 No. Item 816 2 4 Marking Description 2N Series Name 3904 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year

n3904

Abstract: NPN transistor 2n 3904 NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

2n4125 equivalent

Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

NPN switching transistor 2N4403

Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

2N3904

Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SEM ICONDUCTOR ¡m 2N4123 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N 3904 for characteristics. AbSOlUtG Maximum RâtinÇjS

3904

Abstract: transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 4 0 V • Collector Dissipation: Pc m ax =625m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

TRANSISTOR 2N 3904

Abstract: 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1 Characteristic Symbol C ollector-Base Vbltage C ollector-Em itter Voltage

Contextual Info: am mam C h attw o rth, CA M m ic n o s e m i Progress PowcrcO by fochnolaqy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 2N 3904 Features Through Hole Package Capable of 600mWatt:5 of Power Dissipation NPN General Purpose Amplifier

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

2n3904 418

Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2n4125 equivalent

Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N3906 JEDEC

Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2n3904 409

Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

ERF 2030

Abstract: HM 1211 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2N3643 TO-105

Abstract: 2N3566 2N3569 2N5129 2N3642 2N4140 2N4437 2N3643 2N4436 2N6136
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SW ITCHING A N D G EN ER A L PURPOSE VCB VCE V EB h FE at *C V V V min max mA 2N2711 2N2712 2N2713 2N 2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90