2L SOT23 MARKING Search Results

MMBT5401 SOT-23

Abstract: marking 2L 2l sot23 marking transistor marking 2L
Contextual Info: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5551 Ideal for medium power amplification and switching — MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  3 '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LTL431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LTL LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

a7ta

Abstract: RA3 SOT23 sot-23 marking ra3 LR431ALT1G LR431ATLT1G lr431 sot-23 TE 2482 LR431APTLT1G LR431 tic 2250
Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

LTL431

Abstract: A7TA tic 2250 TE 2482 9T SOT23 c 2482 LTL431ATLT1G R1 SOT23 C2002 marking HG
Contextual Info: LESHAN RADIO COMPANY, LTD. LTL431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LTL LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)

2L smd transistor

Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
Contextual Info: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)

MMBT5401-G

Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)

MARKING 2L

Abstract: MMBT5401 MMBT5551
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

SMBT4403

Abstract: SMBT5401 SMBT4401 marking 2G SOT23
Contextual Info: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401

LR431

Abstract: A7TA LR431BLT1 WZR device marking lr431 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. Programmable Precision Reference LR431ATSLT1G  ' 6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS

2L smd transistor

Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

1N914

Abstract: LMBT5401LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G

BTA1514N3

Abstract: BTC3906N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage.

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

DTC124XK equivalent

Contextual Info: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu­ ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT