MMBT5401L Search Results

Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO

1N914

Abstract: MMBT5401LT1G MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage

Contextual Info: RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range

1N914

Abstract: MMBT5401LT1
Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0

Contextual Info: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain „ ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 1. BASE MMBT5401LT1 TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : “ 0.6 Collector base voltage V ( b r )cbo

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.6 A ICM: Collector-base voltage

0430330

Abstract: MMBT5401LT1 0430330024
Contextual Info: MMBT5401LT1 PNP Silicon Epitaxial Planar Transistor for high voltage . SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage -VCBO 160 Vdc Collector Emitter Voltage -VCEO 150 Vdc Emitter Base Voltage -VEBO 5

in995

Abstract: MMBT5401LT1
Contextual Info: MMBT5401LT1 PNP Silicon Epitaxial Planar Transistor for high voltage . SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage -VCBO 160 Vdc Collector Emitter Voltage -VCEO 150 Vdc Emitter Base Voltage -VEBO 5

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage

Contextual Info: MAXIMUM RATINGS R atin g Sym bol V alu e C o lle cto r-E m itte r Voltage VCEO -1 5 0 Unit Vdc C ollector-Base Voltage VCBO - 160 Vdc Em itter-Base Voltage Ve b o MMBT5401LT1* - 5.0 Vdc - 500 m Adc Symbol Max U n it Pd 225 mW 1.8 m w rc R»j a 556 °C/W pd

Contextual Info: MMBT5401LT1G, MMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

MMBT5401LT1

Abstract: 2L SOT23
Contextual Info: MMBT5401LT1 TRANSISTOR PNP SOT-23 Plastic-Encapsulate Transistors SOT-23 Features 3 Power dissipation O P C M : 0.3 W (Tamb=25 C) 1 Collector current 2 I CM : -0.6A 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-base Voltage 2.4 1.3 O 0.95 T j , T stg : -55 C to +150 C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5401LT1 1. BASE TRANSISTOR（ PNP ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.6

MMBT5401L

Contextual Info: MMBT5401L, MMBT5401L, MMBT5401L High Voltage Transistor PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBT5401LT1

Contextual Info: MMBT5401LT1 TRANSISTOR PNP SOT-23 Plastic-Encapsulate Transistors SOT-23 Features 3 Power dissipation O P C M : 0.3 W (Tamb=25 C) 1 Collector current 2 I CM : -0.6A 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-base Voltage 2.4 1.3 O 0.95 T j , T stg : -55 C to +150 C

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
Contextual Info: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc

1N914 SOT-23

Abstract: 1N914 MMBT5401LT1
Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO

MA12 transistor

Contextual Info: WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

MMBT5401

Abstract: MMBT5401L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain Lead-free: MMBT5401L Halogen-free: MMBT5401G „ ORDERING INFORMATION Normal MMBT5401-x-AE3-R

1N914 SOT-23

Abstract: 2L SOT-23 marking 8b sot-23 1n914 sot 1N914 MMBT5401LT1
Contextual Info: MOTOROLA Order this document by MMBT5401LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT5401LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage

SMMBT5401LT1G

Abstract: MMBT5401LT1G
Contextual Info: MMBT5401LT1G, MMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236