2K STATIC RAM Search Results
2K STATIC RAM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| DF2B20M4SL | Toshiba Electronic Devices & Storage Corporation | TVS Diode (ESD Protection Diode), Bidirectional, +/-18.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B6M4ASL | Toshiba Electronic Devices & Storage Corporation | TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B7BSL | Toshiba Electronic Devices & Storage Corporation | TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2B7ASL | Toshiba Electronic Devices & Storage Corporation | TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
| DF2S6P2FU | Toshiba Electronic Devices & Storage Corporation | TVS Diode (ESD Protection Diode), Unidirectional, 5.5 V, SOD-323 (USC) | Datasheet |
2K STATIC RAM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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6116 ram
Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
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l6116l6116-lmil-std-883idt6116+11 | |
cy7c136
Abstract: EME-6300H CY7C13X
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cy7c130/131cy7c140/141cy7c132/142cy7c136/146+5 | |
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Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use |
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b8421/22-90mb8421/22-90lmb8421/22-12mb8421/22-12l+6 | |
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Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use |
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b8421/22-90mb8421/22-90lmb8421/22-12mb8421/22-12l+5 | |
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Contextual Info: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data |
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l6116 | |
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Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05028 Spec Title: CY7C128A 2K x 8 Static RAM Sunset Owner: Prashanth Jnanendra pras Replaced by: None CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM |
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cy7c128a | |
STK25C48Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs |
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stk25c48200ns100-year24-pin+2 | |
ttl SUBSTITUTION DATA BOOK
Abstract: STK25C48
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stk25c48200ns100-year24-pin+1 | |
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Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times |
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stk25c48200ns100-year24-pin+1 | |
STK25C48Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times |
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stk25c48200ns100-year24-pin+2 | |
L6116PC85Contextual Info: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The |
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l6116idt6116cy7c128/cy611624-pin+3 | |
L6116PC85
Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
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l6116idt6116cy7c128/cy611624-pin+8 | |
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Contextual Info: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Functional Description Features • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C |
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cg5982afcy7c13652-pin | |
CG5982AF
Abstract: CY7C136
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cg5982afcy7c13652-pin | |
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TZ1114
Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
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l6116/l6116ll6116100nwl6116l+9 | |
CG5982AF
Abstract: CY7C136
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cg5982afcy7c13652-pin | |
EL6116
Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
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l6116l6116-lmil-std-883idt6116+11 | |
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Contextual Info: V V ITE LIC V61C32 FAMILY HIG H PERFORMANCE LOW POWER 2K x 8 BIT CMOS DUAL PORT MEMORY Features Description • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C 32 is a C M O S 2K x 8 high-speed dual port static RAM with a d va n ce d arbitration logic |
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v61c32 | |
T7052Contextual Info: HIGH-SPEED 2K x 8 FOUR-PORT STATIC RAM ADVANCE INFORMATION IDT 7052S IDT 7052L FEATURES: DESCRIPTION: • The ID T7052 is a high-speed 2K x 8 four-port static RAM de signed to be used in systems where multiple access to a common RAM is required. This four-port static RAM offers Increased system |
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7052s7052lt7052 | |
organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
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lh5116am9128cdm6116hm6116a+16 | |
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Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access The IDT71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor com |
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idt71v321s/lidt71v32125/35/55nsidt71v321s+4 | |
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Contextual Info: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation |
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l6116l6116-lmil-std-883idt6116+2 | |
CY7C136-55NC
Abstract: cy7c136 CY7C136-55NI CY7C132 CY7C146 CY7C136-55JC 128959
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cy7c132/cy7c136cy7c142/cy7c146cy7c132/cy7c136/cy7c142cy7c146+9 | |
b1366 equivalent
Abstract: b1369 B1366 B1363 b1367 B136-2 CY7B136 B136 T b136
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cy7b136cy7b14616bitb1366 equivalent+7 | |