2GHZ DIODE Search Results

Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,

radar sensor

Abstract: sensor radar 24ghz M541 24GHz Radar
Contextual Info: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch with Integrated Bias Network V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Operating Freq. 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required

MKS1851-6-0-202

Abstract: SA602 UMA1005 SA8025 mch315c104kp SA602 Double Balanced Mixer and Oscillator SA8025DK AN1891 MQE530 SA7025
Contextual Info: INTEGRATED CIRCUITS AN1891 SA8025 Fractional-N synthesizer for 2GHz band applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA8025 Fractional-N synthesizer for 2GHz band applications AN1891 Author: Wing S. Djen

n685

Abstract: N699 N684 n683 MKS1851-6-0-202 s8025 AN1891 SA7025 n689 MQE530
Contextual Info: RF COMMUNICATIONS PRODUCTS AN1891 SA8025 Fractional-N synthesizer for 2GHz band applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA8025 Fractional-N synthesizer for 2GHz band applications AN1891 Author: Wing S. Djen

sensor radar 24ghz

Abstract: radar sensor MASW-004240-13170W M541 24GHz Radar
Contextual Info: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required Low Current Consumption

sensor radar 24ghz

Abstract: 24GHz Radar MASW-004240-13170W macom pin diode application radar sensor
Contextual Info: MASW-004240-13170W M/A-COM Products V1 HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required

BF170

Abstract: bf200 datasheet BF200 transistor EL2075CN EL2075C EL2075CS BF200 operational amplifier 2ghz
Contextual Info: 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA

Contextual Info: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)

power amplifier absolute AD 3600 SCHEMATIC

Abstract: 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14
Contextual Info: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)

20GHZ

Abstract: FMA3007 MIL-HDBK-263
Contextual Info: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s

Contextual Info: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

BF170

Abstract: BF200 transistor bf200 datasheet EL2075CN EL2075 EL2075CS
Contextual Info: T T DUC PRO ACE MEN at E T L r LE P e O E t n S R OB rt Ce c D ED MEN al Suppo il.com/ts M O s C ic r E e n t R h O NData r Te c or www.in ct ouSheet L conta -INTE RS I 1- 888 2GHz GBWP Gain-of-10 Stable Operational Amplifier The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz

varactor diodes application

Contextual Info: Hyperabrupt Varactor Diodes Commercial Diode Series Description The hyperabrupt tuning diodes in this series are designed to meet the needs ol today's most commercial applications. Frequencies of operation range from DC to 2GHz. Assembled and tested in surface mountable

Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network 2 - 18GHz Rev. V2 Features MA4SW610B-1 Layout • Ultra Broad Bandwidth: 2GHz to 18GHz • 1.9dB Insertion Loss, 35dB Isolation at 18GHz • Reliable. Fully Monolithic, Glass Encapsulated Construction

diplexer 10ghz

Contextual Info: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*

schottky diode 2GHz to 3GHz

Abstract: diode 1GHz 5533 equivalent rf transmitter receiver 1800Mhz cell phone antenna 0.9ghz to 3ghz properties LTC5533EDE LTC5533 TA03 5GHz RF mixer RSSI mixer AGC
Contextual Info: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*

Contextual Info: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*

Contextual Info: InGaAs APD Photo Diode Modules 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • InGas APD Photodiode • Low Dark Current • High Speed 2GHz • 800nm to 1700nm Response • Miniature Package

Contextual Info: BA 892-02V Silicon Rf Switching Diode
For band switching in TV / VTR tuners up to 2GHz 2
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892-02V AA 1=C SC-79 2=A Maximum Ratings Parameter

BA892-02V

Abstract: SC79
Contextual Info: BA892-02V Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol

VCO circuit diagram

Abstract: Philips varicap "VCO circuit diagram" varicap tv varicap diodes Varicap transistor use in oscillator uhf varicap diode varicap diode varicap diodes data sheet
Contextual Info: A low Cost 1.5 to 2.2GHz Voltage Controlled Oscillator Advance Note AN160 The introduction of the Zarlink Semiconductor range of 2GHz synthesisers and prescalers for low cost applications such as consumer satellite TV reception has created the requirement

Contextual Info: BA 892 Silicon Rf Switching Diode
For band switching in TV / VTR tuners up to 2GHz 2
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892 A 1=C SCD-80 2=A Maximum Ratings Parameter Symbol

Contextual Info: Final Electrical Specifications LTC1757-1/LTC1757-2 Single/Dual Band RF Power Controllers • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Dual Band RF Power Amplifier Control LTC1757-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850MHz to 2GHz