2GHZ DIODE Search Results

n685

Abstract: N699 N684 n683 MKS1851-6-0-202 s8025 AN1891 SA7025 n689 MQE530
Contextual Info: RF COMMUNICATIONS PRODUCTS AN1891 SA8025 Fractional-N synthesizer for 2GHz band applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA8025 Fractional-N synthesizer for 2GHz band applications AN1891 Author: Wing S. Djen

sensor radar 24ghz

Abstract: 24GHz Radar MASW-004240-13170W macom pin diode application radar sensor
Contextual Info: MASW-004240-13170W M/A-COM Products V1 HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required

BF170

Abstract: bf200 datasheet BF200 transistor EL2075CN EL2075C EL2075CS BF200 operational amplifier 2ghz
Contextual Info: 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA

Contextual Info: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)

20GHZ

Abstract: FMA3007 MIL-HDBK-263
Contextual Info: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s

Contextual Info: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

BF170

Abstract: BF200 transistor bf200 datasheet EL2075CN EL2075 EL2075CS
Contextual Info: T T DUC PRO ACE MEN at E T L r LE P e O E t n S R OB rt Ce c D ED MEN al Suppo il.com/ts M O s C ic r E e n t R h O NData r Te c or www.in ct ouSheet L conta -INTE RS I 1- 888 2GHz GBWP Gain-of-10 Stable Operational Amplifier The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz

varactor diodes application

Contextual Info: Hyperabrupt Varactor Diodes Commercial Diode Series Description The hyperabrupt tuning diodes in this series are designed to meet the needs ol today's most commercial applications. Frequencies of operation range from DC to 2GHz. Assembled and tested in surface mountable

Contextual Info: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*

BA892-02V

Abstract: SC79
Contextual Info: BA892-02V Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol

VCO circuit diagram

Abstract: Philips varicap "VCO circuit diagram" varicap tv varicap diodes Varicap transistor use in oscillator uhf varicap diode varicap diode varicap diodes data sheet
Contextual Info: A low Cost 1.5 to 2.2GHz Voltage Controlled Oscillator Advance Note AN160 The introduction of the Zarlink Semiconductor range of 2GHz synthesisers and prescalers for low cost applications such as consumer satellite TV reception has created the requirement

b 772 p

Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772

VES05991

Abstract: BA892 SCD80
Contextual Info: BA892 Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892 A 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

nimh spice model charge

Abstract: sot-23 MARKING CODE GX8 LTC1757A LTC1757A-1 LTC1757A-1EMS8 LTC1757A-2 LTC1757A-2EMS MS10 CAPACITOR 33PF 22E-12
Contextual Info: LTC1757A-1/LTC1757A-2 Single/Dual Band RF Power Controllers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Dual Band RF Power Amplifier Control LTC1757A-2 Improved Internal Schottky Diode Detector Wide Input Frequency Range: 850MHz to 2GHz

BA892-02L

Abstract: marking ba892-02l diode marking ba892-02l
Contextual Info: BA892-02L Silicon RF Switching Diode Preliminary data
For band switching in TV/VTR tuners 2 up to 2GHz
Very low forward resistance 1 very low insertion loss
small capacitance
Ultra small leadless package 1 2 EHA07001 Type BA892-02L Marking AA Pin Configuration

Contextual Info: LTC1757A-1/LTC1757A-2 Single/Dual Band RF Power Controllers FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Dual Band RF Power Amplifier Control LTC1757A-2 Improved Internal Schottky Diode Detector Wide Input Frequency Range: 850MHz to 2GHz

Contextual Info: 19-2105; Rev 1; 11/05 +3.3V, 2.5Gbps Low-Power Transimpedance Amplifier Features The MAX3271 transimpedance amplifier provides a compact low-power solution for 2.5Gbps communications. It features 495nA input-referred noise, 2GHz bandwidth, and 2mA AC input overload.

ARE 1312 RELAY

Abstract: 200w amp at 4040 R-4737
Contextual Info: RN ARN 8GHz*, 150W CARRYING POWER (at 2GHz) MICROWAVE RELAYS RN RELAYS (ARN) *Rating is 6 GHz. Please refer to “REFERENCE DATA” regarding usage between 6 and 8 GHz. New Protective construction: Flux-resistant type Compliance with RoHS Directive FEATURES

ARE 1312 RELAY

Contextual Info: RN ARN 8GHz*, 150W CARRYING POWER (at 2GHz) MICROWAVE RELAYS RN RELAYS (ARN) *Rating is 6 GHz. Please refer to “REFERENCE DATA” regarding usage between 6 and 8 GHz. New Protective construction: Flux-resistant type RoHS compliant FEATURES TYPICAL APPLICATIONS

Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance

QQ-T-191

Contextual Info: DBM-500 DBM-500 Microwave Double Balanced Mixer 1.7GHz to 4.2GHz DBM-500 is SMA connector-equipped double balanced mixer especially suitable for communications equipment applications. The wide bandwidth allows use of this mixer both in the 2GHz radio relay band as

murata SP6T

Abstract: SP6T SP6T ASM
Contextual Info: TQ4M4006 Preliminary data sheet SP6T High Power 2.5V Antenna Switch Quad-Band GSM850/GSM900/DCS/PCS Features: • Unpackaged PHEMT GaAs MMIC Die • Excellent Harmonic Performance –80 dBc 2nd Harmonic at 1GHz / +34dBm –81 dBc 2nd Harmonic at 2GHz / +32 dBm

LTC1757-1CMS8

Abstract: LTC1757-2CMS MS10 marking ms10
Contextual Info: Electrical Specifications Subject to Change LTC1757-1/LTC1757-2 Single/Dual Band RF Power Controllers U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual Band RF Power Amplifier Control LTC1757-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850MHz to 2GHz