2G10 Search Results

2G109

Contextual Info: 2G109 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

BA-2G10UW

Contextual Info: BRIGHT LED ELECTRONICS CORP. BA-2G10UW SINCE 1981 ● Features : 1. Emitting area : 25.5x8.8 mm） 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions : 11.00(.433

6P18P

Abstract: 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103 2G102 2n617
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2N2627 2N617 2N968 2G101 2G101 2G102 2G102 2N1646 2N725 MA903 ~~:1°io 15 • · 20 2N741 2N984 GT31 GT31 2N2199 2N3449 2N960 2N2487 ~~~~~~ 25 30 2N2455 2N2456 NKT352 2N311 2N519 2N828A NKTI3 OC45N ~~~~gA 35

Contextual Info: 2G1024 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2G1026 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2G1025

Contextual Info: 2G1025 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2G108 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2G1027 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

179120

Abstract: E521
Contextual Info: Extract from the online catalog PC 6-16/ 2-G-10,16 Order No.: 1913646 The illustration shows an 8-position version Header, Rated voltage III/2 : 1000 V, Number of positions: 2, Pitch:

Contextual Info: Extract from the online catalog IPCV 16/ 2-G-10,16 Order No.: 1969690 The figure shows a 5-pos. version of the product Header, Nominal current: 76 A, Nom. voltage: 1000 V, Pitch: 10.16

STC1015E

Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

X55a

Abstract: 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2N5036

Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TLO 61

Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2S711

Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

bc156 Transistor"

Abstract: 2n2272 BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

SFT308

Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N5735

Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

A154

Abstract: GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2n1620

Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E