2SK880 Search Results

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)

2SK880

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AU D IO F R E Q U EN C Y LOW N O IS E A M P L I F I E R A P P L I C A T I O N S . 2.1 ± 0.1 1.2 5 ± 0 .1 • High Y fs : EE IYfs |=15ms Typ. at Vd s =10V, Vg s =0 • High Breakdown Voltage: • Low Noise:

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SK880

Contextual Info: TOSHIBA 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs | U nit in mm 2.1 ± 0 .1 : |Yfs| = 15mS Typ. at VDS = 10V, 1.25 ± 0.1 VGS = 0 • High Breakdown Voltage : V q d s = —50V

2SK880

Contextual Info: TO SH IBA 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs| • • High Breakdown Voltage : V Q D g=—50V Low Noise : NF = l.OdB Typ. at Vn« = 10V, In = U.5mA, f = 1kHz,

2SK880

Abstract: MARKING LODB
Contextual Info: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at V D S = 10V, 2.1 + 0.1 vGs=o 1.25 ± 0.1 3- • High Breakdown Voltage : V q d s = —50Y

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • • • • • Unit: mm High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.)

Contextual Info: T O SH IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs| U nit in mm 2.1 + 0.1 : |Yfe| = 15mS Typ. at VDS = 10V, 1.25 ± 0.1 r- • ■1-i vGs=o 3 - • High Breakdown Voltage

2SK880

Contextual Info: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at VDS = 10V, 2.1 + 0.1 vGs=o ± 0.1 1.25 3- • High Breakdown Voltage : V q d s = —50Y

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm • • • • • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.)

2SK880

Abstract: hz4120 10VRg
Contextual Info: 2SK880 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK880 ○ 低周波低雑音増幅用 単位: mm • 小型パッケージです。 • 高|Yfs|のため高利得が得られます。 : |Yfs| = 15 mS 標準 (VDS = 10 V, VGS = 0)

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • • • • • Unit: mm High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.)

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SK880

Contextual Info: 2SK880 TOSHIBA SemiconductorTOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • • • • • Unit: mm High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SK816

Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900
Contextual Info: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2