2SK822 Search Results

2SK822

Abstract: 2sk82
Contextual Info: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M ''*'r7 — MOS F E T V * V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^

Contextual Info: 2SK822 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)

2SK822

Abstract: TD-4002 TD400
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)

2SJ235

Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2sk1299

Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

ac Inverter schematics 10 kw

Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK44

Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

2SK839

Abstract: K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810
Contextual Info: - 70 - ito Hi M tt m € & m m 1 5e! V * S ?£ P d /P c h m * K A (V) * (A) * (W) Ig s s (max) (A) Vg s (V) te % (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25?C) (max) V d s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK805 DDC, Motor-D MOS N E 200 DSS

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK1778

Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2sj177

Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2SK1158

Abstract: 2sk1299 2SK1341 2SK1342 2SK1151 2SK1152 2SK1313 2SK1314 2SK1315 2SK1316
Contextual Info: HITACHI 10 DIII-H Series High Voltage Range, V dss from 250V The DHI-H Series further expands Hitachi's line­ up of advanced MOSFET devices. Recently, new additional high-voltage products to complement those of the low-voltage DIII-L Series. It has the

MBN300A6

Abstract: flyback 200W UPS schematics 2SK1635 2SK415 DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2sk1299 2SK1665 GN12030E
Contextual Info: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

2sk1299

Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in

mosfet inverter schematics

Abstract: MBN300A6 UPS schematics inverter circuit schematics 2sk1299 flyback 200w 2SK1094 GN12015C GN12030E GN4530C
Contextual Info: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Hitachi PF0030

Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

PF0040

Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

2SK1161

Abstract: 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1401 2SK1401A
Contextual Info: HITACHI 11 Table 7: DIII-H Series Typical Characteristics Cont'd Package r I L Electrical Characteristics typ. Absolute Maximum Ratings Type Number VDSS VGSS (V) (V) 250 r •1 r 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167