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    2SK356 Search Results

    2SK356 Datasheets (35)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK356
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK356
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK356
    		Unknown FET Data Book Scan PDF 99.85KB 2
    2SK356
    		Toshiba Silicon N-Channel MOS Type Transistor Scan PDF 136.95KB 3
    2SK3560
    		Kexin N-Channel Power MOSFET Original PDF 41.27KB 2
    2SK3560
    		Panasonic Silicon N-channel power MOSFET For PDP/For high-speed switching Original PDF 72.91KB 3
    2SK3561
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3561
    		Toshiba Switching Regulator Applications Original PDF 229.41KB 6
    2SK356/1
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK3562
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3562
    		Toshiba Original PDF 235.03KB 6
    2SK356/2
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK3562STA4QT
    		Toshiba 2SK3562STA4QT - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220NIS Original PDF 229.41KB 6
    2SK3563
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3563
    		Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) Original PDF 236.15KB 6
    2SK356/3
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK3564
    		Toshiba FETs - Nch 700V Original PDF 224.55KB 6
    2SK3564
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK3564(STA4,Q,M)
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3A TO-220SIS Original PDF 3
    2SK3565
    		Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) Original PDF 188.81KB 3
    SF Impression Pixel

    2SK356 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SK3566(STA4,Q,M)

    MOSFET N-CH 900V 2.5A TO220SIS
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    DigiKey 2SK3566(STA4,Q,M) Tube 199 1
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    Avnet Americas () 2SK3566(STA4,Q,M) Bulk 1
    • 1 $1.43
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    2SK3566(STA4,Q,M) Bulk 12 Weeks 50
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    Verical () 2SK3566(STA4,Q,M) 750 750
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    2SK3566(STA4,Q,M) 675 110
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    Arrow Electronics 2SK3566(STA4,Q,M) 750 18 Weeks 750
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    Chip One Stop 2SK3566(STA4,Q,M) Tube 675 0 Weeks, 1 Days 5
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    Toshiba America Electronic Components 2SK3564(STA4,Q,M)

    MOSFET N-CH 900V 3A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3564(STA4,Q,M) Tube 38 1
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    Avnet Americas 2SK3564(STA4,Q,M) Tube 10,591 16 Weeks 1
    • 1 $0.55
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    Avnet Asia 2SK3564(STA4,Q,M) 24 Weeks 2,500
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    Toshiba America Electronic Components 2SK3565(Q,M)

    MOSFET N-CH 900V 5A TO220SIS
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    Toshiba America Electronic Components 2SK3564(STA4,X,M)

    2SK3564(STA4,X,M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3564(STA4,X,M) 149,050 355
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    Rochester Electronics 2SK3564(STA4,X,M) 149,050 1
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    Toshiba America Electronic Components 2SK3568(Q,M)

    Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3568(Q,M) 11,650 355
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    Rochester Electronics 2SK3568(Q,M) 11,650 1
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    Find more 2SK356 price and stock on Findchips.com

    2SK356 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3564

    Abstract: transistor K3564 K356 2SK35
    Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 K356 2SK35 PDF

    k3561

    Abstract: 2SK3561 K356
    Contextual Info: 2SK3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)


    Original     		2SK3561 SC-67 2-10U1B k3561 2SK3561 K356 PDF

    K3565

    Abstract: 2SK3565 K3565 data
    Contextual Info: 2SK3565 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3565 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3565 SC-67 2-10U1B K3565 2SK3565 K3565 data PDF

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Contextual Info: 2SK3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


    Original     		2SK3563 SC-67 2-10U1B k3563 2sK3563 2sK3563 datasheet PDF

    K356

    Abstract: gti TRANSISTOR 2SK356
    Contextual Info: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		2SK356 K356 gti TRANSISTOR 2SK356 PDF

    transistor k3568

    Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
    Contextual Info: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet PDF

    2sk3562

    Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
    Contextual Info: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 PDF

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Contextual Info: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor PDF

    k3562

    Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent
    Contextual Info: 2SK3562 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3562 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.0 S (標準)


    Original     		2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 K3562 2SK3562 2sk3562 equivalent PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Contextual Info: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 PDF

    transistor K3564

    Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3564 transistor K3564 PDF

    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Contextual Info: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561 PDF

    K3565 transistor

    Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
    Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565 PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563 PDF

    K3568

    Abstract: transistor k3568 2SK3568 K3568 equivalent
    Contextual Info: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 transistor k3568 2SK3568 K3568 equivalent PDF

    K3566 transistor

    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 transistor PDF

    k3566

    Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3566 k3566 K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133 PDF

    transistor K3565

    Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
    Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 transistor K3565 K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC PDF

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Contextual Info: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF

    k3562

    Abstract: k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage
    Contextual Info: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage PDF

    k3564

    Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
    Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a PDF

    transistor k3569

    Abstract: K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
    Contextual Info: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 transistor k3569 K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356 PDF

    2sk3568

    Abstract: transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ
    Contextual Info: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 2sk3568 transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ PDF