2SK175 Search Results

2SK1750

Abstract: 2SK1750-Z 2SK1751 2SK1751-Z
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC r MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET

2sk1757

Abstract: 2SK1756 TC-2427
Contextual Info: DATA SHEET NEC i 2SK1756/2SK1757 MOS FIELD EFFECT POWER TRANSISTORS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2 S K 1 7 5 6 /2 S K 1 7 5 7 is N -c h a n n el M O S Field Effect T ra n ­ PACKAGE DIMENSIONS in millimeters sis to r d esig n e d fo r high v o lta g e s w itch in g ap p lica tio n s.

Contextual Info: 2SK175 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

HITACHI 2SJ56

Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
Contextual Info: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.

2SK1753

Abstract: 2SK1752 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1752/2SK1753 is N-channel MOS Field Effect Tran­

2SK1758

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1758 is N -channel M O S Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.

2aw fet

Abstract: TRANSISTOR 2AW 2SK1758 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS Æ HHH 9FIELD S EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET

2SK17S

Abstract: Nec K 872 EN 60 751
Contextual Info: MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2SK1750/2SK 1751 is N -c h a n n e l M O S F ie ld E ffe c t T ra n s is t o r d e s ig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

2SK1753

Abstract: 2SK1752 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1752/2SK1753 SWITCHING N-CHANNEL POWER MOS FET

2SK1750

Abstract: 2SK1750-Z 2SK1751 2SK1751-Z 2sk17 tea 1751
Contextual Info: DATA SHEET NEC r MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1750/2SK1751 is N-channel M OS Field Effect Tran­ sistor designed for high voltage switching applications.

2SK1752

Abstract: 2SK1753
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1752/2SK1753 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1752/2SK1753 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in millim eters sistor designed for high voltage switching applications.

2SK1758

Abstract: 2SK1758 E
Contextual Info: DATA SHEET NEC Æ 1 H MOS B FIELD 1 EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1758 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for high voltage switching applications.

2SJ56 2sk176

Abstract: HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2SJ55 2Sk176 HITACHI 2SJ56 HITACHI
Contextual Info: blE D • MMTbEOS DDlEflTfl ATT ■ H I T M 7 ^ 3 * ? 2SJ55,2SJ56~ &2 S H I T A C H I / O P T O E L E C T R O N I C S SILICON P-CHANNEL MOS F ET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • Excellent Frequency Response.

2SK1757

Abstract: 2SK1756 MEI-1202 TEA-1035
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1756/2SK1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1756/2SK1757 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in m illim e te rs sistor designed for high voltage switching applications.

2SK176

Abstract: 2Sk175 HITACHI 2SJ56 2sk176 HITACHI 2Sk176 2SK175 2Sk176 HITACHI HITACHI 2SJ56 HITACHI 2Sk175 Hitachi 2sk176 2sj56 SK175
Contextual Info: ' bl E D • HHTbEGS 0013011, Ô01 IHIT4 2SK175,2SK176— H I T A C H I / O P T O E L E C T R O N IC S SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ55, 2SJ56 ■ FEATURES • High Power Gain. • Excellent Frequency Response.

2SK1753

Abstract: 2SK1752 MEI-1202 TEA-1035 TC-2426
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1752/2SK1753 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1752/2SK1753 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in millim eters sistor designed for high voltage switching applications.

irf250

Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200

irf150

Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
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STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.