2SK1253 Search Results

Contextual Info: m ^bEG S 2SK1253 □ O i a S b 'i M TT « H im S IL IC O N N -C H A N N E L M O S F E T HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device • — Can be driven from 5 V source

2SK1253

Contextual Info: 2SK1253 m ^bEG S □ O ia S b 'i M TT « H im S IL IC O N N -C H A N N E L M O S F E T HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device • — Can be driven from 5 V source

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK1778

Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these

2SK1778

Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2sj177

Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK1248

Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching