2SD2536 Search Results

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

2SD2536

Contextual Info: TO SH IBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS • • High DC Current Gain : hjrE-2000 Min. (V0 e = 2V, Ic = 1A) Low Saturation Voltage . T

2SD2536

Contextual Info: TO SHIBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm 5.1 M AX. SWITCHING APPLICATIONS. • High DC Current Gain : hjrE = 2000 Min. (V£ e = 2V, Ic = 1A) • Low Saturation Voltage

Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

D2536

Abstract: 2SD2536
Contextual Info: 2SD2536 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2536 ○ スイッチング用 ○ 誘導性負荷ドライブ用 単位: mm • バイアス抵抗がトランジスタに内蔵されているため部品点数の削減に よる機器の小型化、組み立ての省力化ができます。

Contextual Info: T O SH IB A 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. U nit in mm SWITCHING APPLICATIONS. 5.1 M AX • High DC C urrent Gain : hr E = 2000 Min. (VCE = 2V, Ic = lA) • Low Saturation Voltage

Contextual Info: TOSHIBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1M A X. SWITCHING APPLICATIONS. • • High DC Current Gain : hFE = 2000 Min. (V c e = 2V, I c = lA ) Low Saturation Voltage

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2536 ○ スイッチング用 ○ 誘導性負荷ドライブ用 単位: mm • バイアス抵抗がトランジスタに内蔵されているため部品点数の削減に よる機器の小型化、組み立ての省力化ができます。

2SD2536

Abstract: zener diode 4.2V
Contextual Info: TO SH IBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1 MAX. SWITCHING APPLICATIONS. • • High DC Current Gain : hjrE-2000 Min. (V0 e = 2V, Ic = 1A) Low Saturation Voltage .

Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.2 V (max)

zener diode 4.2V

Contextual Info: 2SD2536 SILICON NPN EPITAXIAL TYPE M IC R O M O T O R DRIVE, H A M M E R DRIVE APPLICATIONS. U n it in mm SW ITCHING APPLICATIONS. • • • High DC Current Gain : hj'£ = 2000 Min. (Vq£ = 2V, Iq = 1A) Low Saturation Voltage : VCE(sat) = l-2V (Max.) (IC = 0.7A, VBH = 4.2V)

d2536

Abstract: 2SD2536 toshiba pb includes
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V)

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

d2536

Abstract: toshiba last digit of year 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228