2SD219 Search Results

SMD BR

Abstract: 2SD2198
Contextual Info: Transistors SMD Type Switching Applications 2SD2198 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 5 .6 0 +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Low collector-to-emitter saturation voltage.

2069B

Abstract: 2SB1449
Contextual Info: Ordering number:EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

2SD2195

Contextual Info: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5

2SD2195

Abstract: is2764 BF 246 Darlington npn BF800
Contextual Info: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9

Contextual Info: Transistors IC SMD Type Product specification 2SD2199 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type Product specification 2SD2198 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 5 .6 0 +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Low collector-to-emitter saturation voltage.

TE 2198

Contextual Info: n u m b e r : EN 3149 2SB1449/2SD2198 No.3149 PNP/NPN Epitaxial P lanar Silicon Transistors SA%YO High-Current Switching Applications F e a tu re s •Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment

2SD2199

Contextual Info: Transistors SMD Type Switching Applications 2SD2199 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2

2SD2398

Abstract: 2SB1316 2SB1567 2SB1580 2SD1867 2SD1980 2SD2195 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.

sd2198

Abstract: D2198 2069B 2SB1449 2SD2198
Contextual Info: Ordering num ber:EN3149 2SB1449/2SD2198 N o.3149 PNP/NPN Epitaxial Planar Silicon Transistors SAW O i 50V/5A Switching Applications Features • S u rface m o u n t type device m ak in g th e follow ing possible -R eduction in the num ber of m an u fa ctu rin g processes for 2SB1449/2SD 2198-applied eq u ip m en t

2SB1460

Abstract: 2069B A 3150 ic D2199 hp 3150 2SB1450 2SD2199
Contextual Info: Ordering num ber: EN 3 1 5 0 2SB1450/2SD2199 No.3150 PNP/NPN Epitaxial Planar Silicon Transistors SAiYO 50V/7A Switching Applications Features • Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment

darlington Vce-200V

Abstract: 2SD2196 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD2196 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol Absolute maximum ratings(Ta=25 )

DARLINGTON 10A

Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD2196 Case : ITO-3P TP15L20 Unit : mm 15A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SB1449

Abstract: 2SD2198
Contextual Info: 2SB1449 / 2SD2198 Ordering number : EN3149A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1449 / 2SD2198 High-Current Switching Applications Features • • Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.

2SD2195

Abstract: 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD1980 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Unit : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2398

Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287

EN3150

Contextual Info: 2SB1450 / 2SD2199 Ordering number : EN3150A SANYO Semiconductors DATA SHEET 2SB1450 / 2SD2199 PNP / NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Features • • • Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment.

2SD220

Abstract: 2SD219 2SD221
Contextual Info: 2SD219, 2SD220, 2SD221 m > <J 3 >NPNffi íí;«rffí h =7 • O-flSffl O iiM Ä ffl O fêÆ SifiU ffl Ï T a= 2 5 °C Il H u ? ÿ ■ ~ î — x '® Œ 3 3 1/ ? ^ ' X ; •• ■'< ? '® E E 7 2SD 219 2SD 220 2SD 221 VcBO 40V 80V 110V VcKO 30V 50V 80V

Marking DP

Abstract: 2SD2398 ROHM MARKING CODE 3J 100V 2A MPT3 2SD1867 2SB1316 2SB1567 2SB1580 2SD1980 2SD2195
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 •Features •E xternal dimensions (Units: mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

Contextual Info: Ordering number:ENN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Package Dimensions unit:mm 2069C [2SB1449/2SD2198] 10.2 4.5 1.3 3 1.2 2.55 : 2SB1449 Specifications 2.55 0 to 0.3 0.4 1 : Base 2 : Collector

2SD2191

Abstract: transistor B 560 T 427 transistor
Contextual Info: 2SD2191 Transistor, NPN Features Dimensions Units : mm • available in FTL TL2 package • high dc current amplification, typically hFE = 1200 at —3 V, Iq —10 mA • high emitter-to-base voltage, VEB0 = 12 V (min) • low collector saturation voltage,

TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.

Contextual Info: Darlington Transistors Darlington Power Transistors Three Terminal Type "i ectrica Characteristics V be ft ton VcE 6 jc Absolute Maximum Ratings Type No. 2SB1282 2SB1283 2SB1284 2SD1793 2SD1026 2SD1789 2SD1023 2SD1792 2SD1025 2SD1794 2SD1027 2SD2196 2SD1795