2SD220 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE HIGH 2SD2204 POWER SWITCHING APPLICATIONS. HAMMER DRIVE, U nit in m m PULSE MOTOR DRIVE A P P L I C A T I O N S . 10±03 . H i g h DC C u r r e n t Gain: h F E = 2000 Min. (aC \'c e = 3V, . Low Saturation Voltage : V c E ( s a t ) = l •5 V ( H a x . ) (at Ic=1.5A)

2SB1455

Abstract: 2SD2203
Contextual Info: Inchange Semiconductor Product Specification 2SB1455 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications

D2200

Contextual Info: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment

D2204

Abstract: 2SD2204
Contextual Info: 2SD2204 東芝トランジスタ シリコンNPN三重拡散形 2SD2204 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 1.5 A)

Contextual Info: Transistors IC SMD Type Product specification 2SD2201 TO-263 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low collector-to-emitter saturation voltage. 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1

EN3152

Abstract: 3152 2069B 2SB1452
Contextual Info: Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment.

2SD2206

Contextual Info: TO SH IBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 2000 (Min.) (V'ce = 2V, Iq = 1A)

sd220

Abstract: 2069B 2SB1452 2SD2201 AN227 TSS-3B TOKYO
Contextual Info: Ordering number-.EN 3152 2SB1452/2SD2201 No.3152 PNP/NPN Epitaxial Planar Silicon Transistors 80V/7A Switching Applications Features •Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1452/2SD2201-applied equipment

2069B

Abstract: 2SB1451
Contextual Info: Ordering number: EN3151 2SB1451/2SD2200 No.3151 PN P/N PN E pitaxial P la n ar Silicon Transistors SANYO 80V/5A Switching Applications Features •Surface m ount type device m aking the following possible -Reduction in the num ber of m anufacturing processes for 2SB1451/2SD2200-applied equipm ent

2sc2202

Abstract: 2sd2202 2SB14 2SB1454 D2202
Contextual Info: Ordering number: EN3249 sm Y o r No.3249 2SB1454/2SD2202 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F eatu res • Low collector-to-emitter saturation voltage • Large current capacity • Micaless package facilitating easy mounting

D2206 transistor

Abstract: d2206 2sd2206
Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2206 transistor

Abstract: D2206 2SD2206
Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

50V 100uf

Contextual Info: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

D2206

Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD
Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 High DC Current Gain : hj^g —2000 Min. (VCE = 3V? IC = 1.5A) Low Saturation Voltage : V q e (sat) = l*5V (Max.) (Iç; = 1.5A)

d2204

Abstract: 2SD2204
Contextual Info: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)

Contextual Info: 2SD2206 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 5.1 M A X . High DC Current Gain : hFE= 200(Min. ) (Vce=2V, I c = 1A) . Low Saturation Voltage

2SD2204

Contextual Info: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 . 03.2 ±0.2 -»I j.- • High DC Current Gain : hjn;E = 2000 Min.

2069B

Abstract: 2SB1451 EN3151
Contextual Info: Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment.

2SB1454

Abstract: 2SD2202 ITR09739 ITR09740
Contextual Info: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

Contextual Info: Ordering number:ENN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Package Dimensions unit:mm 2069C [2SB1452/2SD2201] 10.2 4.5 1.4 3 1.2 2.55 : 2SB1452 2.55 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter

Contextual Info: Ordering number:ENN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

2SB1455

Abstract: 2SD2203
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1455 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2203

d2204

Contextual Info: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)