d2206
Abstract: D2206UK
Contextual Info: TetraFET D2206UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 12.70
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D2206 transistor
Abstract: d2206 2sd2206
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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D2206 transistor
Abstract: D2206 2SD2206
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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D2206
Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2sd2206d2206d2206 transistord2206 a+1to92-mod
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D2206
Abstract: D2206 transistor 2SD2206
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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ITE IT8502E
Abstract: IT8502E R5U230 RT8206A SC8825 IT8301E 9LRS3197 D4802 ICS9LRS3197 MAX17028
Contextual Info: 5 4 SYSTEM PAGE REF. Content PAGE D C B 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 40 43 44 45 46 47 48 50 51 52 53 56 57 58 60 61 64 65 66 67 70 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND
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ics9lrs3197it8502lan-ar8131aud-alc269+11r5u230110ms100usite it8502eit8502ert8206asc8825it8301e9lrs3197d4802max17028
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D2206 transistor
Abstract: D2206 2sd2206 D2206 a
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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d2206
Abstract: D2206 a 2SD2206
Contextual Info: D2206 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ D2206 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn
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IT8712F-A
Abstract: C4161 asus t6322 CE501 ITE8712 C2625 T6311 cm8562gi VP1010
Contextual Info: 5 4 3 2 A7T/M BLOCK DIAGRAM CPU CORE PWR D Dual Channel DDR2 DDR2 REV.F PAGE 61 1 01_BLOCK DIAGRAM 41_G73M_PCIEX16_1 02_AMD S1 CPU 1 42_G73M_PCIEX16_2 03_AMD S1 CPU(2) 43_G73M_DISPLAY 04_AMD S1 CPU(3) 44_G73M_BIOS&CRY 05_DDR2_SO_DIMM-1 45_G73M_GPIO 06_DDR2_SO_DIMM-2
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pciex16pic16c54ht800mhz10g213365213010+15r680910g213402213030r681510g213243213030r6807it8712f-ac4161asust6322ce501ite8712c2625t6311cm8562givp1010
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t6322
Abstract: c4137 IT8712F-A C4722 C4161 SK C4138 L5107 r6511 C4160 C4163
Contextual Info: 5 4 3 2 A7T/M BLOCK DIAGRAM CPU CORE PWR D Dual Channel DDR2 DDR2 REV.F PAGE 61 1 01_BLOCK DIAGRAM 41_G73M_PCIEX16_1 02_AMD S1 CPU 1 42_G73M_PCIEX16_2 03_AMD S1 CPU(2) 43_G73M_DISPLAY 04_AMD S1 CPU(3) 44_G73M_BIOS&CRY 05_DDR2_SO_DIMM-1 45_G73M_GPIO 06_DDR2_SO_DIMM-2
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pciex16pic16c54ht800mhzr6811+1410g213365213010r680910g213402213030r6815t6322c4137it8712f-ac4722c4161sk c4138l5107r6511c4160c4163
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M7615
Abstract: IT8511TE ASUS t880 RN1014A L1307 IT8705F ASP-68200-07 IT8510 ATXP1
Contextual Info: 5 4 3 %/ &PSGO MEKVEQ AMD REV.F D CPU VCORE 2 DDR2-800MHz CLOCK GENERATOR Dual Channel DDR2 Up to 2GB DDRII PAGE 5,6,7,8 PAGE 22 LED&SW&TOUCHPAD ATI M76-M TV OUT PAGE 23 ATI RS690M PCIE *16 DVI PAGE 50 H.T 800 MHz 1600MT/s CRT PAGE 23 D PAGE 16 SO-DIMM X 2
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ddr2-800mhz1600mt/sm76-mrs690m+16jmb360iteit8712f33mhzsb600pmn45enisl6227m7615it8511teasust880rn1014al1307it8705fasp-68200-07it8510atxp1
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B561-C
Abstract: tokin 792
Contextual Info: FEI-Type Choke Coils {Applications {Outline NEC TOKIN standardizes the EI-type output choke coils for a single forward converter method and switching power supplies. • Audio visual equipment, office automation equipment, computers and peripherals, communication equipment
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ec16typeb0806c9-vb1205c6-vb1504c9-v+7b2204c0-vb2703c7-vb3303c4axec22typed0809c8b561-ctokin 792
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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k3918
Abstract: J6815 d5611 K2723 B561C k3918c6 B8202 c1212c C3311 K2203
Contextual Info: TRANSFORMERS AND INDUCTORS TOKIN CORP 41E D • SObTbBb D000SÔQ 2 B T O A I O Inductors for Switching Power Supplies Type E Core Specifications Type Model Shapes and dimen sions mm a . H (horizontal type) b V (vertical type) c Inductance Type EC16 Type EC19
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b0806c3c0807c6d0809c8e08011c+16h08020ci08032cj08044cb1205c6c1206c2d1208c1k3918j6815d5611k2723b561ck3918c6b8202c1212cc3311k2203
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48 pin clcc footprint
Abstract: CLCC-48 footprint
Contextual Info: PA-MACH68 Z Data Sheet 68 pin PLCC socket/28 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction Using this adapter, the AMD MACH120 & 220 in either PLCC or CLCC package can be programmed on DIP programmers. The adapter is made up of 3 sub-assemblies. They assemble via
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pa-mach68socket/28mach120ic120-0+6d220-8d220-7d120-4d120-348 pin clcc footprintclcc-48 footprint
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D2206 transistor
Abstract: d2206
Contextual Info: D2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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k3918
Abstract: d5611 J6815 k2723 H3301 K2203 b0806 d4711 DL507 K1811
Contextual Info: Inductors for Switching Power Supplies Type E Core Specifications Type Model Shapes and dimen sions mm H (horizontal type) V (vertical type) a . Inductance Type EC16 Type EC19 Type EC22 Type EC25 Type EC30 Type EC40 Type EC50 B0806C3 C0807C6 D0809C8 E08011C
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k3918d5611j6815k2723+6h3301k2203b0806d4711dl507k1811
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J6815
Abstract: k3918 d5611 K2723 B8202 b0806 C1212C d2206 k3918c6 H12016C
Contextual Info: Inductors for Switching Power Supplies Type E Core Specifications Type Model Shapes and dimen sions mm H (horizontal type) V (vertical type) a . Inductance Type EC16 Type EC19 Type EC22 Type EC25 Type EC30 Type EC40 Type EC50 B0806C3 C0807C6 D0809C8 E08011C
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b0806c3c0807c6d0809c8e08011c+16h08020ci08032cj08044cb1205c6c1206c2d1208c1j6815k3918d5611k2723b8202b0806c1212cd2206k3918c6h12016c
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