2SD2153 Search Results

2SD2153 SMD

Abstract: DN marking 2SD2153 SMD Transistor DN sot-89 marking dn
Contextual Info: Transistors SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

2SD2153

Abstract: T100 ROHM marking hFE ROHM marking hFE CODE
Contextual Info: High gain amplifier transistor 25V, 2A 2SD2153 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0

0-12v

Abstract: 2SD2153 T100
Contextual Info: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

2SD2153

Abstract: nvn 05
Contextual Info: 2SD2153 h -7 > V ^ £ / T ransistors y 'j a > h7 > V * $ 2SD2153 Epitaxial Planar NPN Silicon Transistor fl£J§ÎI&^2j*llIIffl// Low Freq. Power Amp. • rHiES/Dimensions Unit : mm 1) VcE(sat) A'"'(Êt'0 VcE(sat)=0.5V (Max.) (lc/lB= 1A/20m A) 2) t t t a « « * hFEnnm m tm

transistor bf 196

Abstract: 2SD2153 NE212
Contextual Info: SPICE PARAMETER 2SD2153 by ROHM TR Div. * 2SD2153 NPN BJT model * Date: 2006/11/20 .MODEL 2SD2153 NPN + IS=2.0000E-12 + BF=1.3807E3 + VAF=23.841 + IKF=1.6517 + ISE=2.0000E-12 + NE=2.1217 + BR=83.056 + VAR=100 + IKR=.2628 + ISC=2.0000E-12 + NC=5.0113 + RE=70.000E-3

Contextual Info: High gain amplifier transistor 25V, 2A 2SD2153 Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. Dimensions (Unit : mm) 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0

2SD2153

Contextual Info: 2SD2153 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Small Flat Package General Purpose Application 4 CLASSIFICATION OF hFE 1 1 A Product-Rank

Contextual Info: High gain amplifier transistor 25V, 2A 2SD2153 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0

Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DN-*, where ★ is hFE code • excellent current-to-gain characteristics • 2S02153 (MPT3) ♦0.2 4-5 —0.1 1.6 * 0.1

Contextual Info: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 !External dimensions (Units : mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, — 2A 2SB1427 •F e atu res 1) • A b so lu te maximum rating« (Ta=25C} L a w Vce(Mt). (T y p . — 0 . 5 V at lc / t e = — 1/— 5 0 m A ) Parameter Collector-base voltage Collector-emitter voltage

Contextual Info: Transistors IC SMD Type Product specification 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1

2SD2153

Abstract: T100
Contextual Info: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 !External dimensions (Units : mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3