2SD1410 Search Results

2SD1410

Abstract: 2S0141
Contextual Info: SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2ÍQ.2 FEATURES: . High DC Current Gain : hp£= 2000(Min.) (Vce= 2V, Ic= 2A) MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 OA IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • . 03.2 ± 0.2 2.7± 0.2 High DC Current Gain : hp’g = 2000 Min.

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Maximum Ratings (Ta = 25°C) Characteristics

004AI

Contextual Info: TOSHIBA 2SD1410A TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE n mmr u u mm m m m A ir m INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (V ç E = 2V, Iç = 2 A )

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)

2SD141

Abstract: 2SD1410A
Contextual Info: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb dF “•"'iö'C DISCRETE/OPTO J ^D^SSO □ 0 0 7 T 4 c] □ Ü7 9 4 9 ' “ D ^ T - 3 3 - 2 9 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in nun

Contextual Info: TOSHIBA 2SD1410A 2 S D 1 4 1 OA TOSHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • High DC Current Gain : hpg = 2000 Min. ^3.2 ±0.2 2.7Í0.2 = 2V, I q = 2A)

2SD1410

Contextual Info: 9097250 TOSHIBA d F | - ìc h ts s o ~si TOSHIBA {DISCRETE/OPTO} àb'C 07 9*9 <DISCRET E / O P T O > □oottmt /" T-33-29 SILICON NPNTRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 IGNITER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nun ‘ HIGH VOLTAGE SWITCHING APPLICATIONS.

D1410A

Abstract: 2SD1410A 2-10R1A
Contextual Info: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)

igniter z 2000

Abstract: 2SD1410
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS Unit in rr IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2±Q2 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=2A) MAXIMUM RATINGS (Ta=25°C)

2SD141

Abstract: 2SD1410A
Contextual Info: TO SHIBA 2SD1410A 2 S D 1 4 1 OA TO SHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS • High DC Current Gain : hp^ —2000 Min. (V£ e = 2V, Iq = 2A) INDUSTRIAL APPLICATIONS Unit in mm r <v> O)

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SC3560

Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
Contextual Info: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *