2SD1407 Search Results

2SD1407 Datasheets (26)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD1407	Various Russian Datasheets	Transistor	Original	PDF	84.39KB	8
2SD1407	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)	Original	PDF	70.29KB	1
2SD1407	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR	Original	PDF	69.72KB	1
2SD1407	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.73KB	1
2SD1407	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	41.13KB	1
2SD1407	Unknown	Cross Reference Datasheet	Scan	PDF	39.78KB	1
2SD1407	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SD1407	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	44.6KB	1
2SD1407	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	98.09KB	2
2SD1407	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	135.07KB	1
2SD1407	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.64KB	1
2SD1407	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.68KB	1
2SD1407	Toshiba	TO-220 Package Transistors	Scan	PDF	58.21KB	1
2SD1407A	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SB1016A	Original	PDF	129.33KB	4

2SD1407A	Toshiba	Silicon NPN triple diffused type transistor for power amplifier applications	Scan	PDF	172.51KB	3
2SD1407A	Toshiba		Scan	PDF	151.3KB	2
2SD1407A	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF	173.27KB	3
2SD1407A-O	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF	129.35KB	4
2SD1407A-O(F)	Toshiba	2SD1407A - TRANS NPN 100V 5A 2-10R1A	Original	PDF	129.35KB	4
2SD1407A-R	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF	129.35KB	4

2SD1407 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SD1407A-Y(F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SD1407A-Y(F)		12,160			1 $2.44 10 $2.44 100 $2.44 1000 $0.86 10000 $0.73	Buy Now

2SD1407 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB1016 Abstract: 1C13MAX Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency	OCR Scan	2sb1016 1c13max -100v 2sd1407 +2q76-cu5 -50ma	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)	Original	2sb1016 sc-67 2sd1407 -150v	PDF
2SB1016 Abstract: 2SD1407 2SB-1016 Contextual Info: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING	Original	2sb1016 o-220fa 2sd1407 2sb-1016	PDF
2SD1407 Abstract: 2SB1016A toshiba 2sd1407 2SD1407A Contextual Info: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a 2sd1407 +1toshiba 2sd1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0	OCR Scan	2sd1407a 2sb1016a	PDF
toshiba 2sd1407a Abstract: 2SB1016A 2SD1407A Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a toshiba 2sd1407a	PDF
B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a 2-10r1a b1016a	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications	Original	2sd1407 o-220fa 2sb1016	PDF
Contextual Info: 2SD1407A TO SHIBA 2SD1407A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AM PLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V q e q = 100V Low Collector Saturation Voltage : V ^ g s a t ~ 2.0V (Max.)	OCR Scan	2sd1407a 2sb1016a	PDF
Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a 10hts	PDF
D1407 Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a 2-10r1a d1407	PDF
2SB1016A Abstract: toshiba 2sd1407 2SD1407A Contextual Info: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a toshiba 2sd1407	PDF
2SD1407 Abstract: 2SB1016 low Vce sat PNP Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2sb1016 2sd1407 -100v low vce sat pnp	PDF
ic 746 Abstract: 2sd1407 Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407 POWER AMPLIFIER APPLICATIONS. FEATURES: . High Breakdown Voltage : . Low Collector Saturation Voltage : VcE sat =2.OV(Max.) . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.	OCR Scan	2sd1407 2sb1016 ic 746	PDF

D1407 Abstract: D1407A 2SB1016A 2SD1407A Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a d1407 d1407a	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Contextual Info: 2SD1407A 東芝トランジスタシリコンNPN三重拡散 2SD1407A 通信工業用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。	Original	2sd1407a 2sb1016a 2-10r1a d1407a +1d1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a	PDF
2SC4290A Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K Contextual Info: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310	OCR Scan	2sc4453 2sc343 2sc3052 2sc4911k +132sd1828 2sd1407 2sd2161 2sd2113 2sd1633 2sc4289a 2sc4290a c 4927 2sd2356 2sc4289 4894 4902 2sc3997	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING	Original	2sd1407 o-220fa 2sb1016	PDF
2SB1016 Abstract: 2SD1407 2sb101 Contextual Info: Inchange Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications	Original	2sb1016 o-220fa 2sd1407 2sb101	PDF
2SD1407 Abstract: 2SB1016 pnp hfe 120-240 Contextual Info: JMnic Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION	Original	2sb1016 o-220fa 2sd1407 15llector +2-100v pnp hfe 120-240	PDF
B1016A Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a toshiba transistor silicon pnp epitaxial type	PDF
2SB1016A Abstract: 2SD1407A B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a	PDF
2SD1407 Abstract: 2SB1016 Contextual Info: 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)	Original	2sd1407 sc-67 2sb1016 -150v	PDF

2SD1407 Search Results

2SD1407 Datasheets (26)

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Toshiba America Electronic Components 2SD1407A-Y(F)

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