2SD122 Search Results

2SD1221

Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)

B941

Abstract: B 941 2SD1224
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage

2SB906

Abstract: 2SD1221
Contextual Info: TO SH IB A 2SD1221 T O S H IB A T RA N SIST O R SILICON NPN TRIPLE D IFFUSED T Y PE PCT PRO CESS 2 S D 1 221 A U D IO FR EQ U EN C Y P O W E R A M P L IF IE R A PPLIC A TIO N • U n it in mm Low Collector S aturation V oltage : V CE (sat) = °-4 v (TyP-)

2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Contextual Info: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221

Contextual Info: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15

D1223

Abstract: 2SD1223 a4503 2SB908
Contextual Info: 2SD1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

B906

Abstract: 2SB906 2SD1221
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)

d1222

Abstract: 2sd1222 equivalent 2sD1222 2SB907
Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)

transistor B906

Abstract: 2SB906 7B1A B-906 B906 2SD1221
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。

Contextual Info: TOSHIBA 2SD1221 2 S D 1 221 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY P O W ER AM PLIFIER A PPLICATIO N • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-> High Power Dissipation : P0 = 20 W

2sd1220

Abstract: 2SB905
Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO

Contextual Info: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W

Contextual Info: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)

2SD1224

Contextual Info: TO SH IBA TO SHIBA TRANSISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 224 PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., 5.2 ±0.2 PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15

2SB905

Abstract: 2SD1220
Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage

2SD1224

Abstract: C2804
Contextual Info: TO SH IBA 2SD1224 TO SHIBA TRANSISTOR 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15 • High DC Current Gain

D1223

Abstract: 2SB908 2SD1223
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D1220

Abstract: 2sd1220 2SB905
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage

D1224

Abstract: 2SD1224
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

NPN EPTAXIAL PLANAR

Abstract: s915 2SD1227M 2SB911M
Contextual Info: ROHM CO LTD NOE D ooosam h 7 > y 7s £ / T ransistors IRHM 3 2SD1227M/2SD1862 7^-2 7-2. / 2SD1227EVI X fcf £ v T7^ 7 ° U ~ ^ NPN v U □ > h 7 > V X i ? Power Amp. Eptaxial Planar NPN Silicon Transistors ^ O V lO O Z 1 P c = 1 W t * t l'o 2) VCE sat |=160mV Typ. (at 1A)

D1220

Abstract: 2sd1220 2SB905
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage