2SC6140
Abstract: 2SA22 2SA2220
Contextual Info: 2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 ○ Audio Frequency Amplifier Applications 単位: mm • High collector voltage • Small collector output capacitance : Cob = 12pF • High transition frequency : fT = 100MHz typ. • Complementary to 2SA2220
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2sc6140100mhz2sa22202sa22 |
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2SC6140
Abstract: 2SA2220 16PC1 C6140
Contextual Info: 2SC6140 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6140 ○ オーディオアンプ励振段増幅用 • 単位: mm : VCEO = 160V 高耐圧です。 • コレクタ出力容量が小さい : Cob = 12pF 標準 • トランジション周波数が高い。
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2sc6140100mhz2sa22202-10t1a+216pc1c6140
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943
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2SA2220
Abstract: 2SC6140 2SA22
Contextual Info: 2SA2220 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2220 ○ オーディオアンプ励振段増幅用 • 単位: mm : VCEO = －160V 高耐圧です。 • コレクタ出力容量が小さい。 : Cob = 17pF • トランジション周波数が高い。
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2sa2220100mhz2sc61402-10t1a+2-160v2sa22
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2SA2220
Abstract: 2sa222 2SA22 2SC6140
Contextual Info: 2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 ○ Audio Frequency Amplifier Applications • High collector voltage Unit: mm : VCEO = －160 V • Small collector output capacitance : Cob = 17 pF typ. • High transition frequency : fT = 100 MHz (typ.)
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2sa22202sc61402sa2222sa22 |
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2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4
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ttc003sc-64bcj0016fbcj0016e+92sc5200, 2sa1943tpcp8l01tpcp86022sc5200 2sa19432sc52002sc4793 2sa18372sc5200, 2sa1943, 2sc5198ttc13003l2sc3180n
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa97045f122gt30f12430g12230f124igbt gt30f124gt30j124gt45f122gt30f123tpca*8023gt50n322
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