2SC458 Search Results

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC458

Contextual Info: 2SC4589 Silicon NPN Triple Diffused HITACHI Application CTV/character display horizontal deflection output Features • High speed switching tf 2 0.5 |is • High breakdown voltage VCBO= 1500 V • Isolated package; TO-3PFM Outline 1 Base 2 Collector 3 Emitter

2SC4584

Abstract: TP6W80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P TP6W80HFX Unit : mm 6A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage

2sa1032

Abstract: 2SA1031 Hitachi DSA002754
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage

Contextual Info: IJC - V f i r A Switching Power Transistor • W K r J Ü lS l 10a 2SC4585 NPN S 6 P I6 S O u tlin e D im ensions (TP10W80HFX) A b s o lu te Maximum R a tin g s m Item s IE !§• Svmbol iSsif'¡S.8S Storage Temperature DC Peak DC ^ Î- ^ flîV jK Base Current

ITO-3P

Abstract: 2SC4584 TP6W80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P TP6W80HFX Unit : mm 6A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2sc458

Abstract: Hitachi DSA00398
Contextual Info: 2SC458 K Silicon NPN Epitaxial Application • Low frequency amplifier • Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2sc458

Abstract: 2SC458 datasheet 2SC2310 2SA1031 2SA1032 Hitachi DSA00396
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC458 K Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base

2SC4584

Abstract: TP6W80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P TP6W80HFX 6A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4583

Abstract: TP3W80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case : ITO-3P TP3W80HFX 3A NPN Unit : mm RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: HITACHI 2SC4589 Silicon NPN Triple Diffused CTV/Character Display Horizontal Deflection Output Feature TO-3PFM ♦ H igh speed sw itching if < 0.5 ♦ High breakdow n voltage v' c h o = 1500 V ♦ Isolated package, TO -3FFM Absolute Maximum Ratings Ta = 25“C

MTO 15

Contextual Info: High Voltage-High Speed Switching Transistors HFX series Bipolar transistors NPN Type No. VcBO VcEO V ebo Ic Ib [V] [V] [V] [A] [A] 7 2 2 2 3 3 3 1 1 1 1 1 1 1 2SC4230 2SC4231 2SC4232 2SC4233 2SC4234 2SC4235 2SC4583 2SC4236 2SC4584 1200 800 3 6 6 2SC4237

2SC2308

Abstract: 2sc458 2sc458 transistor 2SA1029 2SA1030 2SC2310 Hitachi DSA00395
Contextual Info: 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308

Contextual Info: 2SC4589 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.5k I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)5Â @I(C) (A) (Test Condition)

Contextual Info: 2SC4581 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)65# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0

Contextual Info: 2SC4580 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)600 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)50# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)4.0

Contextual Info: 2SC458 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.

transistor 2SC458

Abstract: 2sc458 transistor transistors 2sc458 2sc458 RG500
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc458

Abstract: transistor 2SC458 2sc458 transistor
Contextual Info: ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC4584

Contextual Info: Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SA1030

Abstract: 2SA1029 Hitachi DSA002754
Contextual Info: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline 2SA1029, 2SA1030 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30

2SA1032

Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)

2sc458

Abstract: 2SC2308 2sc458 transistor 2SA1029 2SA1030 2SC2310 Hitachi DSA0076
Contextual Info: 2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C)