2SC4522 Search Results

2SC4522

Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SC4522 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1

Contextual Info: Ordering num ber: EN 3141A 2SC4522 No.314lA NPN E pitaxial P lan ar Silicon T ransisto r High-Speed Switching Applications Features . Adoption of FBET, MBIT processes • Large cu rren t capacity • Low collector-to-em itter satu ratio n voltage • F ast sw itching speed

2044B

Abstract: 2SC4522
Contextual Info: Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

2044B

Abstract: 2SC4522 ITR07179 ITR07180
Contextual Info: Ordering number:ENN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Package Dimensions unit:mm 2045B [2SC4522] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage.

ITS 31422

Abstract: 2044B 2SC4522 2SC4523 ITR07189
Contextual Info: Ordering number:ENN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Package Dimensions unit:mm 2045B [2SC4522] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

D 3141 transistor

Abstract: 2044B 25CC 2SC4522
Contextual Info: Ordering number: EN 3141A 2 S C 4 52 2 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures . Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage • Fast switching speed

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC4515

Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
Contextual Info: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

High-speed switching

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

ITS 31422

Abstract: 2044B 2SC4522 2SC4523
Contextual Info: Ordering number:EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

transistor 2SB1201

Abstract: transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250
Contextual Info: T P T i n y Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possibleto make electronic equipment smaller and slimmer.

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -

2sa1562

Contextual Info: TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,TO-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.