2SC4475 Search Results

33381

Contextual Info: Ordering number: EN3338 2SC4475 No.3338 NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amp, High-Voltage Switching Applications A pp licatio n s • High voltage amp • High voltage switching • Dynamic focus F e a tu re s •High breakdown voltage V c eo m in= 1800V

2SC4475

Abstract: ITR07067 ITR07068 ITR07070 ITR07071 VITR07069
Contextual Info: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm

EN3338

Abstract: 2SC4475
Contextual Info: Ordering number:EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm

Contextual Info: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

2sc4710

Contextual Info: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )

2SC4496

Abstract: 2SC4477 2SC4494 2sc4503 tx 2G 2sc450 2sc4504 2SC4473 2SC4474 2SC4475
Contextual Info: - 204 Ta=25ti(*EP(àîc=25‘ C M 2SC4473 £ ffi S H # CRT Vid e o Out iÉ VcBO Vceo (V) (V) 120 Ì C(D C ) (A) 1 20 0 .4 Pc Pc* (W) (W) S IcBO (max) (//A) 1.8 10 10 1 le 1 (A) 0.05 Ib (A) 0.005 10 0.01 1 1 0.03 0.003 5 0. 0 0 0 1 5 2 0. 0 0 0 2 0. 0 0 0 0 4

2SC3997

Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Contextual Info: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SC4475

Contextual Info: Ordering number : EN3338 2 S C 4 4 7 5 NPN Triple Diffused Planar Silicon Transistor No.3338 High-Voltage Amp, High-Voltage Switching Applications Applications • High voltage amp • High voltage switching • Dynamic focus F eatu res • High breakdown voltage Vqeo nrin = 1800V

Contextual Info: Electrical characteristics Ta = 25 Absolute maximum ratings Package type Device Applications VCBO (V VCEO (V) Vebo (V) ic (mA) PC <W) Icbo max @ Vcb A Icbo max (HA) Vcb (V) C) hFE @ VCE ' Ic h FE »T @ VcE * Ic fr VcE (V) ic (mA) (MHZ) VcE (V) Ic (mA) 2SC3954

electron gun CRT

Abstract: dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451
Contextual Info: Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D yr'ia.m i cs F o o u s UseNo picture ever out of focus with better focus characteristics High reliability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and

horizontal section in crt television

Abstract: Electron Tubes crt DEPLETION electron gun CRT
Contextual Info: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’

2sc367

Abstract: DEPLETION 2SC445
Contextual Info: SAfitYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D y n a m i c= F o c u s U s e N o picture ever out of focus with better focus characteristics High 1 el¡ability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and