2SC2782 Search Results

33PFX4

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Contextual Info: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

NPN 2SC2782

Abstract: transistor 2sc2782 2SC2782
Contextual Info: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

2SC2782

Abstract: NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V

Contextual Info: 2SC2782A TOSHIBA Transistor Silicon Npn Epitaxial Planar Type 2SC2782A VHF Band Power Amplifier Applications Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

transistor 2sc2782

Abstract: NPN 2SC2782
Contextual Info: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

2SC 143 SANYO

Abstract: nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2101 2SC2627
Contextual Info: - m % tt € Manuf. Type No. & H. SANYO 2SC 2627 / ~ 2SC 2828 " 2SC 2629 *<-• » M. Q TOSHIBA NEC 2SC2101 2SC2281 2SC2102 2SC2282 i HITACHI Sä ± il FUJITSU fé T MATSUSHITA z m MITSUBISHI * 2SC2420 2SC 2630 ^ H m 2SC2782 2SC 263 1 ta T 2SC2909 2SC 2632

S-AV17

Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

2sc2805

Abstract: 2SC2819H 2SA1174 2SC2811 2SC2808 2SC2810 2SC2800 251C 2SC2776 2SC2778
Contextual Info: - 134 - n Ta=25°Ot *EPÍáTc=25'C m s ít £ ffl 335 VcBO Vc e o lc(DC) Pc Pc* I cbo ViitaA/ (V) (V) (A) (W) (W) (/¿A) 2SC2776 ByL VHF A/MIX/OSC 30 20 0. 03 0.1 2SC2778 fâT HF A 30 20 0.03 0.2 2SC2780 am LF A 140 140 0.05 2 36 16 20 220 2SC2782 175MHz PA

NPN 2SC2782

Abstract: transistor 2sc2782
Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

NPN 2SC2782

Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

2SC2782A

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

2SC2782

Abstract: NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm l Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243