2SC2484
Abstract: 2SA1060 HIGH POWER AUDIO
Contextual Info: SavantIC Semiconductor Product Specification 2SA1060 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC2484 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION
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2SC2484
Abstract: 2SA1060
Contextual Info: Product Specification www.jmnic.com 2SA1060 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2484 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base
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C42S
Abstract: 2SC2484 T-33-Z 2SA1060
Contextual Info: T ^ n s ÔnÏ T T n DL/ELEK -CIC3- 1SE D • ^35852 Silicon Epitaxal Base ~lesa Transistor Q010M47 7 T -3 3 -Z I ~ r-3 d -u 2SA1060 PNP 2SC2484(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1060 (PNP) Absolute Maximum Ratings (Ta=25°C) Collector-Base Voltage
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2SC2484
Abstract: 2SA1060
Contextual Info: “^ ¡ X S Ô N Î C INDL/ELEK ÎIC> 12E » • ^ 3 2 0 5 2 0010447 7 ■ Silicon Epitaxal Base ‘ lesa Transistor 2SA1060 PNP 2SC2484(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1060 (PNP) Absolute Maximum Ratings (Ta=25°C) Rating Unit Collector-Base Voltage
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2SC2484
Contextual Info: "P a n a s o n ic :in d l/e le k *ic> ise d • b ^ a s a 0010447 7 ■ Silicon Epitaxal Base ‘ lesa Transistor 2SA1060 PNP 2SC2484(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1060 (PNP) Absolute Maximum Ratings (Ta=25°C) Item Collector-Base Voltage
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2sc2484
Abstract: 2SA1060
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1060 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High Power Dissipation ·Complement to Type 2SC2484 APPLICATIONS ·Designed for high power audio frequency amplifier
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Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1060 Silicon PNP Power Transistor a -x DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) • High Power Dissipation • Complement to Type 2SC2484
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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2sa1046
Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350
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2sa10012sa10022sa10031602sa1004+162sa10052sa10062sa1006a2sa1006b2sa10072sa10962sa10462sa10232sa1023 equivalent2sc23982sa10262sa10662sa10942sa10272sc25252sc2375
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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mn115pmn116pmn1201amn1201m+15mn1201smn1202mmn1204amn1204bmn1204emn1204fan6512nmn1225mn1280mn6520mn6130mn6147cmn12c261dmn12c201dmn3107
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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mn1001mn1020215mn1020407mn1020415+16mn1020715mn102lf53gmn1040mn110mn1101mn115on31052sd2603mn41174052sc901bmn6520mn1280mn1225mn6147c2sc5573gn2013
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SB667
Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
Contextual Info: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204
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NEC 2561
Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557
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2sc30382sc23332sc27382sc3968+162sc30392sc23352sc26132sc27392sc42052sc2749nec 2561nec 2581nec 25652565 nec2sc25642sc2320nec 25622581 nec2561 nec2sc237
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2SC3303 to-251
Abstract: 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634
Contextual Info: POWER SILICON NPN Item Part Number Number I C 5 -10 15 -20 25 30 35 40 45 -50 ~ BUR10 BUR10 BUR10 SVTSO-5 SVTSO-5 SVTBO-5 2N2SS0 2N4113 2N4115 2N4306 2N4309 2SC520 2N1725 2N3S50 SOT5636 SOT63S3 2N2S93 2N5326 "~""";JIOI'\L. 55 - -60 2SC3367 2S0961 2N5337
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2SB5950
Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15
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1132
Abstract: 2SD1307 2SM77 1130b 2sc2484 2SD1175 2sd1176 2SD1111 2SD602 2SD987
Contextual Info: - m tt % £ = m SANYO S M TOSHIBA b NEC a B ÍI HITACHI "M dr FUJITSU iï fâ T MATSUSHITA 2SD 1092 — - S 2! 2SD 1096 B it 2SD 1097 B it 2SD1171 2SD 1098 B it 2SD1171 2SD 1099 B ir 2SD1175 2SD 1100 a ii 2SD 1101 B it 2SD 1102 B it 2SD1173 2SD 1103 B it 2SD1175
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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