2SA1254
Abstract: 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage
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10,7mhz
Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)
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2sa12542sc220610,7mhz |
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Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage
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10,7mhz
Abstract: 2SA1254 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 30 V Collector-emitter voltage (Base open)
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2sc2258 complementary
Abstract: 2SC2206 2SC2258 2SA1254 2SC2258A 2SC2258B Ma0058
Contextual Info: P A N A S O N I C INDL/ELEK-CSEHI} 72C D | b^BSflSM □ □ □ c]145 fi K -7- 3 / - / ? 2SC2206 2SC2206 '> iJ NPN N P N Epitaxial Planar Amplifier 'J /C om plem entary Pair with 2SA1254 2SA1254 6.9±0.1 • 4# ^ /F e a t u r e s • F M /A M y t « 7 R F J i i f l i z f t j » / S u i t a b l e fo r R F A m plifier in F M /
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2sc22062sa12542sc2258 complementary2sc2258+32sc2258a2sc2258bma0058
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2SC2206
Abstract: 2SA1254 transistor 2Sc2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as
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2sc22062sa1254100mhztransistor 2sc2206 |
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current
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Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 R 0.9 R 0.7 • Absolute Maximum Ratings Ta = 25°C 1.0 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High transition frequency fT • Low collector-emitter saturation voltage VCE(sat)
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2SA1254
Abstract: 2SC2206
Contextual Info: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SA1281
Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400
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2sa12012sa12022sa12032sa1204+162sa12052sa12062sa12072sa12082sa12092sa12102sa12812sa12772sa12732sa12742sa12512sa12182sa12362sc32482sa12292sa1267
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2SC1957
Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A
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2sc22742sc17402sc21392sc207+152sc33302sd6372sd10902sc23332sd8592sc19572sc2407a2sc24072sc2314toshiba 2sc17632sc20402sc20332sc20212sc-2021k 2056
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2SC2633
Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Contextual Info: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with
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2sa111q2sa11102sc2590-99-i-l+8100mhz2sc26332sa11252sa12542sc22062sa1112sa11cc1216
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BC238BP
Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323
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2n44352sc27762sc27782n3293+132n32942n24762sc3982sc399bc238bpbf494cbc238cpbsx772n295bf1942n2954bf494 motorolabf332
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2sc46092sc48082sa18062sc4627+162sa17902sc46262sc46552sd23452sc4612sa1d1276ab1419d638 transistorb1361ic 1271ad1273d1985ab947ab11781985a
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