2SC12 Search Results

transistors 1U

Abstract: 2SA699 2SA699A
Contextual Info: AOK AOK Semiconductor P ro d u ct S pecification 2SA699 2S A 699A Silicon PNP Pow er Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1226/1226A APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1

2SA743

Abstract: 2SA743A WS50
Contextual Info: AOK AOK Semiconductor P ro d u c t S p ecificatio n 2SA743 2SA743A Silicon PNP Pow er Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1212/1212A APPLICATIONS • For low frequency power amplifier applications P IN N IN G PIN D E S C R IP TIO N

2SC1235

Abstract: TC-70
Contextual Info: Inchange Semiconductor Product Specification 2SC1235 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits.

2SC1226

Abstract: 2SC1226A 699A 2sc12
Contextual Info: Inchange Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD I ^2 3 1. Em itter 2. Collector 3. Base 2SA 743, 2SA 743A Absolute Maximum Ratings Ta = 25 °C

2SC1227

Contextual Info: SavantIC Semiconductor Product Specification 2SC1227 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1212A

Abstract: 2SC1212 2SC1212AV
Contextual Info: SavantIC Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2

2SC1212A

Abstract: Hitachi DSA00164
Contextual Info: 2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

tl 271

Abstract: 2SC1815 2SC2926 2SC290B 2SC1923 2sc1959 2SC1907 288a 2SC266B 2SC828
Contextual Info: ft §y £ Type No. € = Manuf. SANTO m Ä 2 TOSHIBA m. NEC B HITACHI tL * ± a FU JITSU fé T MATSUSHITA m h MITSUBISHI □ — A ROHM * 2SC 251A n 2SC941TM 2SC1215 * 2SC1923 2SC1215 2SC2926 2SC1923 2SC1215 2SC2926 2SC 252 ^ a m * 2SC 253 * 2SC 260 ✓

ST2SC

Abstract: 2SC1213 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 2SA673A
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

2sc1213

Abstract: transistor 2SA673 2SA673 2SA673A 2SC1213A 2SC1213CTZ-E 2SC1213DTZ-E PRSS0003DA-A SC-43A 2SC1213ABTZ-E
Contextual Info: 2SC1213, 2SC1213A Silicon NPN Epitaxial REJ03G0684-0200 Previous ADE-208-1048 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)

ma40016

Contextual Info: Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency VHF band amplification and oscillation Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings 13.5±0.5 High transition frequency fT.

Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 5 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1215 + 2SD1360

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SC1214

Abstract: loya 2SC1213
Contextual Info: HITACHI 2SC1214 SILICON NPN EPITAXIAL LOW FREQ UEN C Y AM PLIFIER t. ïîm illfl Ì. Cotkcttr Bw I ABSO LU T E MAXIMUM RATINGS Ta=25*C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SC12I4 Symbol tm) Unit Collector to base voltage Vçao 50 V Collector to emitter voltage

2SC1013

Abstract: 2SC1243 2SA623 2SA703 2sc124
Contextual Info: PNP x t i ^ + v r 2SA623, 2SA703 bÿ>iîZ9 51- ffí 131 • •* ~ / u K i M V - * -e , V CEä - 2V—2SA623, V0Eg - l V —2SA703 o .k n e e • I- 7 ^ * |g £ c 4 W ( 1 0 0 x l 0 0 x 2 m m 7 ^ i S fe iS S o # , j f H ^ 2 5 l C ) 0 3 . 2SC1013, 2SC1243

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

Contextual Info: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

Contextual Info: Preliminary Datasheet 2SC1213, 2SC1213A R07DS0431EJ0300 Previous: REJ03G0684-0200 Rev.3.00 Jun 07, 2011 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A

2SC1213

Abstract: 2SC1213A transistor 2SA673 2SA673 2SA673A Hitachi DSA00395
Contextual Info: 2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213

2SA673A

Abstract: 2SC1213A
Contextual Info: 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage