2SC10 Search Results

2sc108a

Abstract: 2SC109A IC FL1
Contextual Info: T O S H I B A -CDISCRETE/OPTOl Sb ,2SC109A, SILICON NPN EPITA X IA L TYPE PCT PROCESS 9097250 TOSHIBA DE | * i [ H 7 a S D Q O O T M D b S 5bL 0 7 ^ 0 6 <DISCRETE/OPTO) Unit in m m 09,39 MAX. ÍZÍ8.45MAX. HIGH FREQUENCY A M P L I F I E R APPLICATIONS. HIGH S P E E D SWITCHING APPLICATIONS.

2sc1098

Abstract: 2SC1098A
Contextual Info: Product Specification www.jmnic.com 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small

2SC1061

Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
Contextual Info: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications

2SA670

Abstract: 2SA671 2SC1061
Contextual Info: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency

2SC1051

Contextual Info: Inchange Semiconductor Product Specification 2SC1051 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation APPLICATIONS ・For low frequency power amplifier and large power switching applications PINNING see Fig.2 PIN

2SC1034

Abstract: 2sc103
Contextual Info: Inchange Semiconductor Product Specification 2SC1034 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage APPLICATIONS ·For horizontal deflection output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3

2SC1079

Abstract: 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.

2SC1027

Abstract: 2sc1027 equivalent 2SC1027 package 2SC102
Contextual Info: Inchange Semiconductor Product Specification 2SC1027 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertor ・General purpose power amplifiers

2sc1050

Abstract: npn transistors 300V 0,5a
Contextual Info: SavantIC Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1096

Abstract: 2SC1096 hfe ic 4060 2sc1096 equivalent 2SC1096 M
Contextual Info: SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts

2SC1046

Contextual Info: SavantIC Semiconductor Product Specification 2SC1046 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For CRT horizontal output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2SC1030

Contextual Info: SavantIC Semiconductor Product Specification 2SC1030 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

transistor C1000 Toshiba

Abstract: 2sc1000 transistor 2SC 536 C1000BL 2SA493 C1000-BL transistor C1000 Y transistor C1000 V536 2SC100
Contextual Info: 5 /U D > N P N X ^ iF 2 /? J W B h 5 > 5 ? ^ P C T Ä 3 S SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS). ° Low N o ise Audio A m p lifie r A p p lic a tio n s . • l i E 2SC1000 G INDUSTRIAL APPLICATIONS T t : # /Jv •$ V * : v 0E 0 = 50V NF = SdB •

transistor c1008

Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 2SC1008Y 2SC1008-O TRANSISTOR 2sc1008 npn c1008
Contextual Info: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: 2SC1098A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃） Collector current ICM : 0.7 A Collector-base voltage V BR CBO : 80

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SC1013

Abstract: 2SC1243 2SA623 2SA703 2sc124
Contextual Info: PNP x t i ^ + v r 2SA623, 2SA703 bÿ>iîZ9 51- ffí 131 • •* ~ / u K i M V - * -e , V CEä - 2V—2SA623, V0Eg - l V —2SA703 o .k n e e • I- 7 ^ * |g £ c 4 W ( 1 0 0 x l 0 0 x 2 m m 7 ^ i S fe iS S o # , j f H ^ 2 5 l C ) 0 3 . 2SC1013, 2SC1243

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SC1070

Abstract: 9011 npn
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2 S C 1 0 7 0 B The 2SC1070(B) is specifically designed for UHF RF amplifier applications. The 2SC1070(B) features high PACKAGE DIMENSIONS power gain, low noise, and excellent forward AGC in m illim e te rs (inches)

2SC1079 TOSHIBA

Abstract: 2SC1079 2sa679 toshiba 2SC1080 transistor 2SC1079 2SA679 2SC1079 2SC1079-R 2SC1079Y 2sc1079r TRANSISTOR 2SC1080
Contextual Info: 2SC1079, 2SC1080 S I L iœ N N PN T R IP L E DIFFUSED MESA TRANSISTOR U n i t in mm o V' : P c = 100 W T c = 25° C • rSlfE E ’C 'i' = V ceo = 120V (2SC1079) • 2SA 679/2SA 680 t =» v 7 ” !) V Ceo = 100V(2SC1080) v ft ') }£& a j Í J 1 1.00. 0 ± 8 ; g |_

2SC1008

Abstract: TRANSISTOR 2sc1008 st2sc1008 ic CD4081 pin diagram datasheet
Contextual Info: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be