2SB955 Search Results

Contextual Info: 2SB955 K Silicon PNP Triple Diffused HITACHI Application Power switching complementary pair with 2SD1126(K) Outline TO -220AB 2 Q 1 O1. Base 2. Collector (Flange) 3. Emitter c L ^W V - -W v 1.0 kß 200 Q. (Typ) (Typ) Q l' 2SB955ÇK) Absolute Maximum Ratings (Ta = 25 °C)

2SB955

Abstract: 2SD1126
Contextual Info: HITACHI 2SB955 R SILICON PNP TRIPLE DIFFUSED POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD1126 1. Uà* 2. Collccior 11-lange I 1,0kil 2000 (lyp) tlyp.) 3 Emití« (Dink;n*iún!. ill ill n i ) (JEDEC TO-220AB) ! ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol

2sd112

Contextual Info: HITACHI 2SB955 K -SILICON PNP TRIPLE DIFFUSED POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD112& Ì Bisc 2 . C o fk v to f <HaAge> i ökö 20ÔÜ y Emitter ,! y p I it y p .i J lOimcnviunvm nuit JE D EC TO-220AB) I A BSO LU TE MAXIMUM RATINGS <Ta=25°C)

Contextual Info: 2SB955 K Silicon PNP Triple Diffused HITACHI Application Power switching complementary pair with 2SD1126(K) Outline T O -220AB 1. Base 2. Collector (Flange) 3. Em itter 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit C ollector to base voltage

Contextual Info: 2SB955 K Silicon PNP Triple Diffused HITACHI Application Power switching complementary pair with 2SD1126(K) Outline TO -220AB 2 Q 1 < O - 1. Base 2. Collector (Flange) 3. Emitter - V\Ar_ 1.0 ki2 (Typ) 200 Sì (Typ) 2SB955(K) Absolute Maximum Ratings (Ta = 25 °C)

2SB955

Abstract: 2SD1126 DSA003644
Contextual Info: 2SB955 K Silicon PNP Triple Diffused ADE-208-863 (Z) 1st. Edition Sep. 2000 Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA001650

Contextual Info: 2SB955 K Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item

tip340

Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265

Hitachi DSA002787

Contextual Info: 2SB955 K Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120

2SB955

Abstract: 200B 2SD1126
Contextual Info: HITACHI 2SB955 g -SILICON PNP TRIPLE DIFFUSED POWER SW ITCHING C O M PLEM ENTARY PAIR W ITH 2S D 1126 1. Da*c 2 . C o lle c to r (F la n g e ) l.Oktt 3 . E m itte r (ly p .) 20 0 0 (ly p .) 3 (D im e n s io n s in m m ) (JEDEC TO -220AB) I A B S O LU T E M AXIM UM RATINGS (Ta=25°C)

2SB955

Abstract: 2SD1126 Hitachi DSA003765
Contextual Info: 2SB955 K Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1399

Abstract: 2SB955 DSA003644
Contextual Info: 2SB1399 Silicon PNP Triple Diffused ADE-208-873 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item

2SB1399

Abstract: 2SB955
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

Hitachi DSA002751

Contextual Info: 2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.0 kΩ Typ 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

2SB955

Abstract: 2SD1126
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

Contextual Info: 2SB1399 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SB1399 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -1 2 0 V VCEo -1 2 0 V V EB0 -7 V Collector to em itter voltage

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2