2SB710 Search Results

2SB710A

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

2SB710A

Contextual Info: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current

Contextual Info: Product specification 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic

2SB710

Abstract: marking CQ
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm • Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V

WR1 marking code

Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
Contextual Info: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

2SD602

Abstract: 2SB710A SD602A 2SB710 2SD602A K150 SC-59A ice5 2SB710 S 2SB710 R
Contextual Info: 2SB710, 2SB710A 2 S B 7 1 0 , 2 S B 7 1 0 A \/~ ? is — j - ] f 2 / S i PNP Epitaxial Planar v ij zi y PN P x fcf£ - S t e f f i / G e n e r a l A m p lifie r 2SD 602, 2 S D 6 0 2 A £ 13 > ~ f x) > U / C o m p le m e n ta r y P a i r w ith 2SD 602, 2 S D 602A

2SD836

Abstract: 2SB750 2SB750A 2SB710A 2SD602 2sd836a 2SB71 2SB710 2SB726 2SD602A
Contextual Info: PA NASONIC INDL/ELEK-CSEMI} 75C D | ^ 3 5 0 5 4 h * T - • ^ * 1 5 0000045 4 2SB710, 2SB710A 2SB710, 2SB710A '> U Z] > P N P x tf £ ¿ r ì / T — Si P N P Epitaxial Planar — Ä S IM te ffl/ G e n e r a l A m p l i f i e r 2SD 602, 2SD 602A t > Z f l S > 2 ')/

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistors 2SD0602A 2SD602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistor 2SD0602A 2SD602A Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to 2SB0710A (2SB710A) 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat)

2SB0709A

Abstract: 2SB0710 2SB709A 2SB710 XN04482 XN4482
Contextual Info: Composite Transistors XN04482 XN4482 Silicon PNP epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SB0710(2SB710) ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol

hFE CLASSIFICATION Marking 24

Abstract: marking DR 2SB0710 2SB0710A marking 25 SC-59 power Transistor hFE CLASSIFICATION Marking CE 2SB710 2SB710A 2SD0602 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

2SD602

Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol

mn171603

Abstract: an8523S AN3815K Mini servo motor AN3452FBS mini servo motor driver AN3893FHP MN1873223 MN187324 5 amp General Purpose Diode
Contextual Info: A pplication B lo c k Diagram s >6480 • Video Applications Note The transistors and diodes listed below can be used for the peripheral circuits in this block diagram. V C R System • Resistor built-in transistor: UN2000T Series S Mini 3P) • General purpose transistor: 2SB710A/2SD602A, etc.

2SD2529

Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
Contextual Info: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A

2SB0710

Abstract: 2SB710 XN04402 XN4402
Contextual Info: Composite Transistors XN04402 XN4402 Silicon PNP epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0710(2SB710) x 2 elements 0 to 0.1 ● (Ta=25˚C)

Contextual Info: Product specification 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic +0.1 1.3-0.1 +0.1 2.4-0.1 Large collector current IC.

2SB710A

Abstract: 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Parameter 0.4±0.2 2 1 (0.95) (0.95)

2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 2SD0602 30 VCBO VEBO 5 V Peak collector current ICP 1 A Collector current