2SB507 Search Results

2SB507 Datasheets (30)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB507	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)	Original	PDF	24.82KB	1
2SB507	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	45.52KB	1
2SB507	Mospec	PNP Silicon Power Transistor	Scan	PDF	115.23KB	3
2SB507	Mospec	POWER TRANSISTORS(3.0A,60V,30W)	Scan	PDF	115.21KB	3
2SB507	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	43.05KB	1
2SB507	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	109.07KB	1
2SB507	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	113.15KB	2
2SB507	Unknown		Scan	PDF	42.05KB	1
2SB507	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.03KB	1
2SB507	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	107.61KB	2
2SB507	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	36.06KB	1
2SB507	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.95KB	1
2SB507	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	110.38KB	1
2SB507	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.36KB	1

2SB507	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	141.5KB	1
2SB507	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	35.86KB	1
2SB507	Unknown	Cross Reference Datasheet	Scan	PDF	38.73KB	1
2SB507	Unknown	Transistor Replacements	Scan	PDF	74.03KB	1
2SB507	Sanyo Semiconductor	Low Frequency Power Amp Applications	Scan	PDF	1.04MB	12
2SB507	Sanyo Semiconductor	General Purpose Transistors	Scan	PDF	60.56KB	1

2SB507 Price and Stock

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SANYO Semiconductor Co Ltd 2SB507D 2SB507D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB507D		18,376		601	1 - 10 - 100 - 1000 $0.58 10000 $0.51	Buy Now
Rochester Electronics	2SB507D		27,732		1	1 - 10 - 100 $0.55 1000 $0.46 10000 $0.41	Buy Now
onsemi 2SB507D 2SB507D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB507D		1,468		601	1 - 10 - 100 - 1000 $0.58 10000 $0.51	Buy Now
Rochester Electronics	2SB507D		1,492		1	1 - 10 - 100 $0.55 1000 $0.46 10000 $0.41	Buy Now
onsemi 2SB507E 2SB507E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB507E		641		601	1 - 10 - 100 - 1000 $0.58 10000 $0.51	Buy Now
Rochester Electronics	2SB507E		641		1	1 - 10 - 100 $0.55 1000 $0.46 10000 $0.41	Buy Now

2SB507 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB507 Abstract: 2SD313 Contextual Info: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier	Original	2sb507 o-220c 2sd313 o-220	PDF
2SA1015 Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385 Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 -' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^	OCR Scan	sa1015 2sa385 2sa715 2sb941 +102sb1064 2sa1015 2sa673 2sa1358 2sa965 2sb1212 2sb560 2sa934 2sa985 nec 2sa1096	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313	Original	o-220 2sb507 2sd313 -200ma +1-500ma	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507	Original	o-220 2sd313 2sb507 200ma +1500ma	PDF
TRANSISTOR B507 Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor Contextual Info: SANYO SEMICONDUCTOR CORP 12E D \| 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.	OCR Scan	t-33-2sb507 2sb508 2sd313 +112sd314 transistor b507 transistor d313 d313 amplifier sd313 sanyo d313 d313 voltage regulator d313 power amplifier d313 for amplifier power supply with regulator d313 2sc1175 transistor	PDF
Sanyo D313 Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D \| 7Ti7D7Li 0004ÛÛ7 S \| T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.	OCR Scan	2sb507 2sb508 2sd313 2sd314 +9sanyo d313 transistor d313 transistor b507 d314 transistor d313 transistor sd313 d313 for amplifier transistor npn d313 d313 amplifier	PDF
2SD313 Abstract: 2SB507 2sd313 equivalent 2SD313 E Contextual Info: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE	Original	2sd313 2sb507 o-220 06-feb-07 +22sd313 equivalent 2sd313 e	PDF
2SB 2045 Abstract: 2SD313 B507D 2sd314 2sb507 sanyo b 507 2SB507 Contextual Info: "SANYO SEMICONDUCTOR CORP 12E 2SB507, 508 D I 711707t 0003178 T'33' ? 2SD313, \ . 314 PNP/ npn Triple D iffu sed P lan a r 2012 201OA S ilic o n T ra n sisto rs Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.	OCR Scan	711707t 2sb507 201oa 2sd313 +62sb508 2sd314 2sb 2045 b507d 2sb507 sanyo b 507	PDF
2sd313 equivalent Abstract: 2SD313 2sd313 applications 2SB507 Contextual Info: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier	Original	2sd313 o-220c 2sb507 2sd313 equivalent +12sd313 applications	PDF
2SB507 Abstract: 2sd313 equivalent 2SD313 TRANSISTOR 2SB507 Contextual Info: PNP 2SB507 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c)	Original	2sb507 o-220 2sd313 2sd313 equivalent +1transistor 2sb507	PDF
2SD313 Abstract: 2SB507 transistor 2sd313 Contextual Info: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507	OCR Scan	2sb507 2sd313 transistor 2sd313	PDF
2SB415 Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661 Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596	OCR Scan	2sb507 2sb596 2sa1069 2sb856 +132sb1291 2sb508 2sb632 2sb415 sanyo 2sb509 nec b 536 2sb631 hitachi 2sa1284 2sa966 2sb631 2sb557 toshiba 2sa934 2sb661	PDF
2SD313 Abstract: 2sd313 equivalent 2SB507 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507	Original	o-220 2sd313 2sb507 200ma +2500ma 2sd313 equivalent	PDF
TRANSISTOR 2SB507 Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313	Original	2sb507 2sd313 transistor 2sb507 transistor af 416 pnp +32sd313 e 2sd313 equivalent 2sd313 applications	PDF

2S8834 NEC Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A	Original	2s8834 nec 2s8834 2s8941 b0180 +6b0936 2s8505 s570g 2s87 2s8906 2sb834y	PDF
2SB507 Abstract: 2SD389 Contextual Info: 2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)	Original	2sd389 o-220 2sb507	PDF
2SA934 Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836 Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54	OCR Scan	2sb507 2sb596 2sa985 2sb856 +122sb941 2sb1033 2sa1782 2sa1015 2sa953 2sa836 2sa934 2sa970 2sa933 2sa952 2sb1064 2sa720	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507	Original	o-220 2sd313 2sb507 200ma +1500ma	PDF
TRANSISTOR 2SB507 Abstract: 2SB507 2SD313 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313	Original	o-220 2sb507 2sd313 -200ma +2-500ma transistor 2sb507	PDF
Contextual Info: 2SD313 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 3 2 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2sd313 o-220 2sb507 200ma +1500ma	PDF
transistor 2sb507 Abstract: 2SB507 2SB507 npn transistor Contextual Info: 2SB507 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2sb507 o-220 2sd313 -100a +5-10ma -200ma -500ma transistor 2sb507 2sb507 npn transistor	PDF
BC547 sot package sot-23 Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306 Contextual Info: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB	Original	2n2955 2n3055 2sb1426 2sb507 +12o-220ab 2n3772 bc547 sot package sot-23 bc547 sot23 bc557 sot-23 bc557 sot package sot-23 bc556 sot package sot-23 2sa1015 sot-23 2sc945 sot-23 bc548 sot23 2sb772 to92 pcr306	PDF
2SD313 Abstract: 2sd313 equivalent 2SB507 416W Contextual Info: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier	Original	2sd313 o-220c 2sb507 2sd313 equivalent +1416w	PDF
2SB507 Abstract: 2SD313 to25W 416W Contextual Info: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier	Original	2sb507 o-220c 2sd313 o-220 +2to25w 416w	PDF

2SB507 Search Results

2SB507 Datasheets (30)

2SB507 Price and Stock

SANYO Semiconductor Co Ltd 2SB507D

onsemi 2SB507D

onsemi 2SB507E

2SB507 Datasheets Context Search

2SB507

2SA1015

TRANSISTOR B507

Sanyo D313

2SD313

2SB 2045

2sd313 equivalent

2SB507

2SD313

2SB415

2SD313

TRANSISTOR 2SB507

2S8834 NEC

2SB507

2SA934

TRANSISTOR 2SB507

transistor 2sb507

BC547 sot package sot-23

2SD313

2SB507