2SB158 Search Results

2SB1589

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1589 Features Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SB1587

Abstract: audio Darlington 6A 2SD2438
Contextual Info: Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2438 APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2

2SB1587

Abstract: 2SD2438
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 DESCRIPTION •With TO-3PML package ·Complement to type 2SD2438 APPLICATIONS ·Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Units : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 (1) 0.5 1.6 (2) 3.0 0.5 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SB1588

Abstract: 2SD2439
Contextual Info: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) 2SB1588 Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V 2SB1588 Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Units : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 (1) 0.5 1.6 (2) 3.0 0.5 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2438

Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN
Contextual Info: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

100V 2A MPT3

Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2439

Abstract: 2SB1588 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1588 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2sd2439

Abstract: 2SB1588
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2439 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1588 APPLICATIONS ・Audio ,series regulator and general purpose applications PINNING PIN DESCRIPTION

2SB1587

Contextual Info: ^Ss.mi-dondu.cto^ ., U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1587 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)

2SB1588

Abstract: 2SD2439 DSA0016506
Contextual Info: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC

2SD2398

Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SB1587

Abstract: 2SD2438 transistor 2SB1587
Contextual Info: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions 2SB1587 Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A

2SB1588

Abstract: 2SD2439
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 DESCRIPTION •With TO-3PML package ·Complement to type 2SD2439 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SB1588

Abstract: 2sd2439 2sd2439 2sb1588 2sb15
Contextual Info: Inchange Semiconductor Product Specification 2SB1588 Silicon PNP Darlington Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2439 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

at maga

Abstract: 2SB1589
Contextual Info: Transistor 2SB1589 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment

2SB1587

Abstract: 2SD2438 DSA0016506
Contextual Info: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A

TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.

2SB1589

Abstract: 2sb15
Contextual Info: Transistors 2SB1589 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)