2SB1404 Search Results

Contextual Info: 2SB1404 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 Q 1. Base 2. Collector 3. Emitter 1 O - C — VW — — W \r 4 ki2 Typ 300 Sì (Typ) 2SB1404 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings

Contextual Info: 2SB1404 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Em itter 2SB1404 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to base voltage ^C B O -1 2 0 V -1 2 0

Hitachi DSA001650

Contextual Info: 2SB1404 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1. Base 2. Collector 3. Emitter 12 3 1 ID 4 kΩ Typ 300 Ω (Typ) 3 2SB1404 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: HITACHI 2SB1404— Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Hem Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEQ -120 V Emitter to bass voltage VEöO -7 V Collector current

Contextual Info: 2SB1404 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 Q 1 1. Base 2. Collector 3. Emitter O - C — VW — — W \r 4 kß Typ 300 £2 (Typ) 2SB1404 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SB1404

Contextual Info: SavantIC Semiconductor Product Specification 2SB1404 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications

2SB1404

Contextual Info: 2SB1404 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000

2sb1355

Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SB1404

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications.