2SA1807 Search Results

2SA1807

Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
Contextual Info: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)

2SA1807

Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • F ea tu re* ^Absolute m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage (V c e o = —600V) 2 ) L o w V c e i w i ) . (T y p .—0.25V at Ic/I b = —3 0 0 /—60m A)

2SA1862

Abstract: 2SA1807 A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

2SA1807

Abstract: A343 2SA1862
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

TRANSISTOR A331

Abstract: TLTG 2sa 102 transistor A343 2SA1807 2SA1862
Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply (—600V, —1 A) 2SA1807 • ) A b solute m axim um rating s (T a = 2 5 °C ) Features 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 6 0 0 V ) P a ra m e te r

2SA1662

Abstract: 2sa1807
Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • Features •A b s o lu te maximum ratings (Ta—25”C ) 1) H igh breakdow n vo ltag e (V ceo ~ — 6 0 0 V ) 2 ) Lo w 3) F a s t switching, ( t f : T y p .0 .4

TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)

2SA1807

Abstract: A331 2SA1862 96-109-A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45

Contextual Info: hÿ > 2SA1807F5 7* $ /Transistors 2SA1807F5 H M & t f c y U P N P > •; zi > h =7> V7, $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • i4JfiT+ife0/'D im ensions (Unit : mm) 1) r a i H U T S 5 «

H9 transistor marking

Abstract: transistor h9
Contextual Info: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V

2SA1833

Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
Contextual Info: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

B1182

Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SC4649 N,P

Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

MPS9488

Abstract: 8C208 KT3818 2SA838 8C252 LOW-POWER SILICON PNP MPS948 8C2528 BSY41 8C513
Contextual Info: RF LOW-POWER SILICON PNP Item Part Number Number V BR CEO 5 10 NA02EI NA02FI NA12EI NA22EI NA22FI NA22XI NA22YI NA02EY NA02FY NA22EY ~~~~x~ 15 20 NA22YY 8C2058 8C2088 SF213 SF313 8C2528 8C2538 8C2828 ~~~~~~ 25 30 NA02FJ NA12EJ NA22EJ NA22FJ NA22XJ NA22YJ 8C259C

2sd198

Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
Contextual Info: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

2SB1516

Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
Contextual Info: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *