2SA18 Search Results

Contextual Info: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING

Contextual Info: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

transistor c 4793

Abstract: transistor 4793 TOSHIBA C 4793 hfe 4793 2sc 4793
Contextual Info: TOSHIBA 2SC4793 Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Com plem entary to 2SA1837 A bsolute M axim um Ratings Ta = 25°C SYMBOL RATING UNIT C ollector-B ase Voltage

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

2SA1803

Abstract: 2SC4688
Contextual Info: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2

2SA1804

Abstract: TO3PFM 2SC4689 Jmnic
Contextual Info: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2

2SA1869

Abstract: 2SC4935
Contextual Info: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃

2SA1804

Abstract: 2SC4689
Contextual Info: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN

Contextual Info: Ordering number:EN 4-720 S4%ro 2SA1865 N o.4720 P N P E p it a x ia l P l a n a r Silicon T r a n s i s to r Muting Circuits, Driver Applications F e a tu re s • On-chip b ia s re s is to rs R1 = lO kil, R 2 = 10kf2 . • V ery sm all-sized pa ck ag e m a k i n g 2 SA 1865-applied se ts sm all a n d slim.

ic59-64075-G4

Abstract: B6B-XH-A IC-2564 2SA1015Y hirose connector 6 pin Yamaichi ic59 Connector B6B-XH-A 223j 2SA1015 Y 2SA1015-Y
Contextual Info: Video Input Module Evaluation Board -332- Video Input Module SBX1761-01/1762-01 Evaluation Board Component List 1 CXD1177Q LM1881M 2SA1015-Y. GR 2SA1815-Y. GR 5VLW IC25-64075-G4 IC59-64075-G4 B7B-XH-A 1 XHP-7 1 B6B-XH-A 1 XHP-6 13 SXH-001T-P06M BNC-R-PC HIF3B-34PA-2.54DSA

l305a

Abstract: 2SA1880 ITO-220
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1880 Silicon PNP Power Transistors D ES C R IP TIO N • W ith ITO -220 package • Switching pow er transistor • Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A b s o lu te m axim um ratings Ta=25*C

2SA1823

Contextual Info: Ordering number: E N 3870 _ 2SA1823 PNP Epitaxial P lanar Silicon Transistor 20V/8A Switching Applications Features •Adoption of MBIT process. • Low saturation voltage. ■Fast switching speed. • Large current capacity. • It is possible to make appliances more compact because it’s height on board is 9.5rnm.

2SA1822

Abstract: A1822 DC DC converter 5v to 200V ic
Contextual Info: TOSHIBA 2SA1822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 822 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION r • Excellent Switching Times ton = l-0/«s Max. , tf= 1 .0 /«s (Max.) at Iç)= —0.3A

2SA1875

Contextual Info: Transistors SMD Type High-voltage Switching Transistor 2SA1875 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Adoption of FBET process. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25

Contextual Info: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a1869 transistor

Abstract: a1869 2SA1869
Contextual Info: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SA1873

Abstract: 2SC4944
Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SA1892

Abstract: 2SC5029
Contextual Info: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W

2SC4738

Abstract: 2SA1832
Contextual Info: 2SA1832 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832 ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。