2SC4738F Search Results

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity

2SC4738F

Abstract: 2SA1832F
Contextual Info: 2SC4738F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738F ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) : VCEO = 50 V • 電流増幅率が高い。

2SC4738F

Abstract: 2SA1832F
Contextual Info: TO SH IBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • High Voltage and High Current : V c e O - 50 V, Ic = 150 mA (Max.) Excellent hjpg Linearity

transistor ESM 3000

Abstract: 2SA1832F 2SC4738F
Contextual Info: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V ç;e O = 50V, Ig = 150mA (Max.) Excellent hFE Linearity

2sc4738ft

Abstract: 2SA1832FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2sc4738ft

Abstract: 2SA1832FT IC5010
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V · High Current: IC = 150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE Linearity

Contextual Info: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • 1.6 ± 0.1 High Voltage and High Current ; V0 EO = 5OV, Iq = 150mA (Max.) Excellent hpg Linearity : hpE dC = 0.1mA) / hpE dC = 2mA) = 0.95 (Typ.)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738FT ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 : VCEO = 50 V • コレクタ電流が大きい。 : IC = 150 mA (最大) • 電流増幅率が高い。

2SC4738FV

Abstract: MARKING LY toshiba 2SA1832FV
Contextual Info: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV

Contextual Info: TOSHIBA 2SC 4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • U nit in mm 1.6 ± 0.1 High Voltage and High Current 0.85 ± 0.1 : V cE O = 50V> XC = !50m A (Max.) • Excellent hpj; Linearity

Contextual Info: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2sc4738f

Abstract: 2SA1832F
Contextual Info: 2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738F Audio Frequency General Purpose Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

LM3582

Abstract: max1987 RP113 LM358 1.2 N3 3kv SEC MLB-160808-0220B-N3 quanta 1394XO PWS-37 txc 14.318MHZ
Contextual Info: 1 2 * GM 1. VCC PR57: 4 5 1 GME 1.2V 17.4K/F 1.35V 14K/F 27.4/F 37.4/F 2. HLRCOMP R91: 3 Intel RB1 Block Diagram BANIAS/Dothan MBX-112 478 PIN micro FC-BGA A A System bus 4x100 MHz R/G/B CRT NORTH BRIDGE LVDS SIGNAL LCD ( Up to UXGA ) DRAM SIGNAL Montara-GME

G5243T11U

Abstract: WPCE775L R23G G682L09TT12U dk05 SSX35BCB Sony TV SMPS AC495 ich9 quanta
Contextual Info: 1 2 3 4 5 1 TW1 Block Diagram CPU Penryn 14.318MHz P3-4 478 PIN micro FC-PGA A A FSB 667 MHz(166X4) FSB 800MHz(200X4) FSB 1066MHZ(266X4) CLOCK GEN ICS9LPRS365 DVI DVI P23 LCD Cantiga LVDS P7 CRT R/G/B P10 UNBUFFERED DDRII SODIMM DDRII 667/800 P2 P11 GM45

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.