2SA1732 Search Results

2044B

Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
Contextual Info: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。

2044B

Abstract: 2SA1732
Contextual Info: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

2SA1732

Abstract: 2044B ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

Contextual Info: Ordering num beriE N 3136 2SA1732 No.3136 SA W O PN P E p itax ial P la n a r Silicon T ra n sisto r I High-Speed Switching Applications Features • Adoption of FBET, MBIT processes •Large c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage

2SA1148

Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9

2044B

Abstract: 2SA1732 ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

High-speed switching

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2044B

Abstract: 2SA1732
Contextual Info: Ordering number: EN 3 1 3 6 2 S A 1 73 2 No.3136 PN P E pitaxial P la n ar Silicon T ransistor High-Speed Switching Applications F e a tu re s - Adoption of FBET, MBIT processes • Large cu rren t capacity •Low collector-to-em itter saturation voltage ■F ast switching speed

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -

2sa1562

Contextual Info: TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,TO-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.