2SA1012 Search Results

2sa1012

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220

2SA1012

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER

2sc2562

Abstract: 2SA1012
Contextual Info: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

transistor 04 N 70 BP

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • • • • PNP Plastic-Encapsulate Transistor Capable of 25 Watts of Power Dissipation.

25WATTS

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • • • • • • PNP Plastic-Encapsulate Transistor Capable of 25 Watts of Power Dissipation.

Contextual Info: TOSHIBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 Q1 2 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= “ 0*4V (Max.) at 1q = -3 A Hieh Speed Switching Time : tc,+rr= l.Ows(Tvd.)

2sc2562

Abstract: 2SA1012
Contextual Info: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage

a1012 transistor

Abstract: transistor A1012 a1012 a1012* transistor
Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SA1012

Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SA1012

Abstract: ABE+407
Contextual Info: Æ â m o s p e c PNP SILICON POWER TRANSISTORS PNP .designed for use in power amplifier applications 2SA1012 FEATURES: * Low Collector-Emitter Saturation Voltage v C E s a tf0 -4 V(Max @ Ic=3.0A,Ib=0.15A * DC Current Gain hFE= 70-240@lc= 1.0A * High Speed Switching Time

2SA1012

Abstract: 2sc2562
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 „ ORDERING INFORMATION

Contextual Info: TOSHIBA 2SA1012 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : ts^ = 1 .0 (as(Typ.)

2sa1012

Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
Contextual Info: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

2SC256

Abstract: 2SA1012
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1012 INDUSTRIAL A P P L I CATIONS Unit in ram HIGH CURRENT S WITCHING APPLICATIONS. 0 3 .6 ± 0 .2 FEATURES: o L o w C ollector Saturation Voltage n * .a3 : V c E s a t = - 0 .4 V(Max.) at I C= - 3A CO High Speed Switching Time : tgtg = l .O u s ( T y p .)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR PNP FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)

2SA1012

Abstract: hFE is transistor to220
Contextual Info: ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION

2SA1012

Abstract: 2Sa1012 transistor 2sc2562 TO-220 PNP
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors TO-220 PNP 1. BASE FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)

2sc2562

Abstract: 2SA1012 2SA1012 jmnic
Contextual Info: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION