2N6985 Search Results

MRF69

Contextual Info: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6985 The RF Line N PN S ilicon Push-Pull RF P o w er Transistor 125 WATTS. 30-400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r w id e b a n d large-signal o u tp u t and

2U37

Abstract: H1P transistor with three end QQ 8114 transistor 2N6985 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe
Contextual Info: I INCH-POUND I MIL-S-1950 0/584 25 Ju ly 1990 MILITARY SPECIFICATION prut rniinn rrnn nrwt r r oc.ru ourauuu I UK u l u u , nr- r\Ai ir r\ rnnif»t t t a « Kr ruM CK ik a n ^ i^ iu k , tinti ▼ i ta nu nrnt r\éin i r\in i ru ^ n -ru L L TYPES JANTX. JANTXV. ANO JANS. 2N6985 AND 2N6986

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

2N6985

Abstract: lg system ic transistor ac 125 equivalent
Contextual Info: MOTOROLA SC XSTRS/R F b'iE » b3b?25M D1DD120 703 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range.

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n Push-Pull RF P o w er T ran sisto r . . . designed prim arily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA