2N6618 Search Results

Contextual Info: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription

HXTR-6103

Abstract: 2N6618 HPAC-100
Contextual Info: LOW NOISE TRANSISTOR H E W L E T T PACKARD COMPONENTS 2N6618 HXTR- 6103 Features G U ARANTEED LOW NOISE FIGURE 2.2 dB Max. at 2 G Hz, 1.8 dB Typical H IG H GAIN 12.0 dB Typical Gain at NF Bias Conditions RUG G ED H E R M ETIC PACKAGE Co-fired M etal/Ceram ic Construction

2N6743

Abstract: HXTR-6104 2N6618 2N6743TX 2N6742 2N6617 HXTR-6001 HXTR-6103TX hxtr 6101 transistor HXTR-6101
Contextual Info: H E W L E T T - P A C K A R D n CMPNTS 2GE D B 44 475Ö4 OOGSSSfl 4 a T - 31-/9 L ow N o ise T ran sistors HXTR-6001 C hip 2N6617 HXTR-6101, I X and TXV 2N6742 (HXTR-6102, TX and TXV) 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Technical D ata

2n6618

Abstract: MA42161 FOR5
Contextual Info: Silicon Low Noise Bipolar Transistors MA42160 Series Description Nominal fT - 7 GHz Nominal Current Range - 0.5 to 7 mA Iq Max. - 20 mA Frequency Range - 500 MHz to 4 GHz Geometry - 72 The MA42161 is a low noise silicon planar epitaxial tran­ sistor for.5 to 4.0 GHz amplifiers. These transistors feature

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

2N6618

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N 6618 NPN Silicon High Frequency Transistor . . . designed fo r use in hig h -fre q ue n cy, low *no ise , sm a ll-sign a l, n a rro w and w id e b a n d a m plifiers. Ideal fo r use in m ic ro s trip th in and th ick film app licatio n s.

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

2N3571

Abstract: MA42141 2N5054 2n5053 2N5651
Contextual Info: Silicon Low Noise Bipola Transistors MODEL NUMBER PAGE 2N 2857 2N 3570 2N3571 11-3 11-3 11-3 2N 3572 2N 3683 11-3 11-3 11-3 2N 3839 2N 38 80 . 2N 3953 2N5031 2N 5032 2N5053 2N5054 2N 51 79 2N5651 2N 5662 11-3 11-3 .11-3 11-3 11-3 11-3

MA40285

Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Contextual Info: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238